Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano/Sinano32

The Sinano3.2 recipe

Recipe Sinano3.2

Recipe	Gas	BCl3 5 sccm, HBR 15 sccm
	Pressure	2 mTorr, Strike 3 secs @ 5 mTorr
	Power	900 W CP, 60 W PP
	Temperature	20 degs
	Hardware	100 mm Spacers
	Time	120 secs
Conditions	Run ID	426, 428 ID
	Conditioning	Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
	Mask	The 180 nm zep resist etched down to 110 nm

• The results of the Sinano3.2 recipe
• 

  The 30 nm trenches

• 

  The 60 nm trenches

• 

  The 90 nm trenches

• 

  The 120 nm trenches

• 

  The 150 nm trenches

• BCl3 3 sccm, HBr 17 sccm, 2 mTorr, Strike 3 secs @ 5 mTorr, 900 W CP, 60 W PP, 20 degs, 120 secs

Nominal trench line width	'	'	30	60	90	120	150	Average	Std. dev.
Etch rate	nm/min		67	91	98	100	105	92	15
Sidewall angle	degs		82	83	82	82	81	82	1
CD loss	nm/edge		-14	-14	-18	-15	-15	-15	2
CD loss foot	nm/edge		-14	-5	-3	3	6	-3	8
Bowing			10	16	17	15	17	15	3
Bottom curvature			-41	-11	-6	6	6	-9	19
Zep etch rate								40