Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano/Sinano3

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The Sinano3.0 recipe

Recipe Sinano3.0
Recipe Gas BCl3 5 sccm, HBr 15 sccm
Pressure 2 mTorr, Strike 3 secs @ 5 mTorr
Power 900 W CP, 50 W PP
Temperature 20 degs
Hardware 100 mm Spacers
Time 150 secs
Conditions Run ID 417, 418 and 419
Conditioning Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
Mask 110 nm zep etched down to 64 nm
Wafer WF_2A#4_feb06_2011



Nominal trench line width ' ' 30 60 90 120 150 Average Std. dev.
Etch rate nm/min 236 307 333 341 339 311 44
Sidewall angle degs 84 82 83 81 80 82 2
CD loss nm/edge 28 46 62 88 103 65 30
CD loss foot nm/edge 28 46 62 88 103 65 30
Bowing 21 32 35 33 36 31 6
Bottom curvature -30 -27 -18 14 16 -9 22
Zep etch rate 46

The Sinano3.0 recipe

Recipe Sinano3.0
Recipe Gas BCl3 5 sccm, HBr 15 sccm
Pressure 2 mTorr, Strike 3 secs @ 5 mTorr
Power 900 W CP, 50 W PP
Temperature 20 degs
Hardware 100 mm Spacers
Time 150 secs
Conditions Run ID 417, 418 and 419
Conditioning Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
Mask 110 nm zep etched down to 64 nm
Wafer WF_2A#4_feb06_2011



Nominal trench line width ' ' 30 60 90 120 150 Average Std. dev.
Etch rate nm/min 236 307 333 341 339 311 44
Sidewall angle degs 84 82 83 81 80 82 2
CD loss nm/edge 28 46 62 88 103 65 30
CD loss foot nm/edge 28 46 62 88 103 65 30
Bowing 21 32 35 33 36 31 6
Bottom curvature -30 -27 -18 14 16 -9 22
Zep etch rate 46