Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142

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The nano1.42 recipe

Unless otherwise stated, all content on this page was created by Jonas Michael-Lindhard, DTU Nanolab

Recipe nano1.42

Recipe	Gas	C4F8 75 sccm, SF6 38 sccm
	Pressure	4 mTorr, Strike 3 secs @ 15 mTorr
	Power	800 W CP, 40 W PP
	Temperature	-20 degs
	Hardware	100 mm Spacers
	Time	120 secs
Conditions	Run ID	2017
	Conditioning	Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
	Mask	211 nm zep etched down to 82 nm

• The results of the nano1.42 recipe
• 

  The 30 nm trenches

• 

  The 60 nm trenches

• 

  The 90 nm trenches

• 

  The 120 nm trenches

• 

  The 150 nm trenches

• C4F8 75 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 800 W CP, 40 W PP, -20 degs, 120 secs

Nominal trench line width	'	30	60	90	120	150	Average	Std. dev.
Etch rates	nm/min	148	158	164	167	166	160	8
Sidewall angle	degs	90	90	90	90	90	90	0
CD loss	nm/edge	7	-7	-7	-28	-28	-13	15
CD loss foot	nm/edge	12	5	6	-15	-1	1	10
Bowing		-1	1	-2	-5	-7	-3	3
Bottom curvature		-46	-30	-29	-31	-27	-32	8
zep	nm/min						65

Etching SRN (Silicon Rich Nitride) with nano1.42

This test has been done by Leonid Beliaev

• 274nm SRN by LPCVD ("6 inch LS" recipe)
• Substrate: Si/SiO2(1100nm)
• DUV-lithography: KRF M230Y resist 360 nm, Barc 65 nm, exposure dose 220J/m2
• Pattern: Grating with period 400 nm and grating bar width of
• Barc etch in Pegasus 1 at -19 deg, 40s
• Nano 1.42 at -19 deg, 5 min

Image: Leonid Beliaev