Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4

The content on this page, including all images and pictures, was created by DTU Nanolab staff, unless otherwise stated.

Feedback to this page: click here

Pegasus 4 - 150mm silicon oxide and silicon nitride etching

The DRIE-Pegasus3 and DRIE-Pegasus4 operator station and cassette loading stations, Photo: DTU Nanolab internal

DRIE-Pegasus 4 is dedicated Silicon oxide and Silicon nitride etching. It is originally designed for silicon etching but gas mass flow controllers has been changed to optimize silicon oxide and silicon nitride etching. The system is setup for 6" wafers. Sampler samples has to be bonded to a 6" carrier to be etched in the system.

The user manual and contact information can be found in LabManager:

DRIE Pegasus 4 in LabManager - requires login

Process information

Standard recipes

• Barc Etch
• SiO2 Etch
• Silicon Nitride Etch
• Nitride etch with SiO2 etch recipes
• Slow etch of silicon nitride and silicon oxide

Wafer bonding

To find information on how to bond wafers or chips to a carrier wafer, click here.