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Al2O3 etching with the ICP metal
Parameter
|
Recipe name: Al2O3 Etch
|
Coil Power [W]
|
1200
|
Platen Power [W]
|
200
|
Platen temperature [oC]
|
0
|
BCl3 flow [sccm]
|
60
|
Cl2 flow [sccm]
|
30
|
Pressure [mTorr]
|
4
|
Material to be etched
|
Etch rate using the above parameters
|
Al2O3
|
- ~93nm/min (30s, 1/4 wafer on 6" carrier)
2017-01-20 bghe@nanolab
|
Al2O3 etching by Sanjeev Vishal Kota sanvis@nanolab
Parameter
|
Nanoscale Al2O3 etch
|
Microscale Al2O3 etch
|
Coil Power [W]
|
300
|
500
|
Platen Power [W]
|
15
|
70
|
Platen temperature [oC]
|
0
|
0
|
BCl3 flow [sccm]
|
20
|
40
|
Cl2 flow [sccm]
|
7
|
15
|
Pressure [mTorr]
|
1.2
|
3.0
|
Material to be etched
|
Nanoscale Al2O3 etch
|
Microscale Al2O3 etch
|
Etch rate
|
6.25 nm/min on 6" wafer, Summer sanvis@nanolab
|
25 nm/min on small samples on Si carrier, Summer 2022 sanvis@nanolab
|
Al2O3 etching by bghe@nanolab
Recipes
Al2O3 etch
Parameter
|
Recipe 1:Al2O3 etch platen only
|
BCl3 (sccm)
|
15
|
Ar (sccm)
|
15
|
Pressure (mTorr)
|
5
|
Coil power (W)
|
0
|
Platen power (W)
|
30
|
Temperature (oC)
|
20
|
Spacers (mm)
|
100 mm
|
Results
- Profile view, etch time 40 min, started with 380 nm zep resist
- Top view after resist strip