At the moment DANCHIP has 3 PECVDs that can deposite silicon oxide with or without dopants of Boron, Phosphorous or Germanium. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and will be describes under III-V processing. Look at the PECVD page to learn more about the PECVDs at DANCHIP. All though PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.
Recipes on PECVD1 for deposition of silicon oxides
Recipes
| Recipe name
|
SiH4 flow [sccm]
|
NO flow [sccm]
|
N2 flow [sccm]
|
Pressure [mTorr]
|
Power [W]
|
Description
|
| 1oxide
|
17
|
1600
|
0
|
400
|
380LF
|
Developed for waveguides
|
Expected results
| Recipe name
|
Deposition rate [nm/min]
|
RI
|
Uniformity [%]
|
| 1oxide
|
~193
|
1.46
|
2
|
Recipes on PECVD3 for deposition of silicon oxides
Recipes
| Recipe name
|
SiH4 flow [sccm]
|
NO flow [sccm]
|
N2 flow [sccm]
|
Pressure [mTorr]
|
Power [W]
|
Description
|
| LFSiO
|
12
|
1420
|
392
|
550
|
60
|
|
LF=Low Frequency
Expected results
| Recipe name
|
Deposition rate [nm/min]
|
RI
|
Uniformity [%]
|
| LFSiO
|
~81
|
~1.48
|
<1
|
