Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using LPCVD TEOS

TEOS oxide, has a dielectric constant of 3.56 (For thermal oxide it is 3.46). Furthermore TEOS has a breakdown voltage in the order of $10^6$

for sjov

${{𝒱}}^{\prime }=-\sqrt{rcs}A\cosh (\sqrt{rcs}(L-x))-\sqrt{rcs}B\sinh (\sqrt{rcs}(L-x))$

$Z=\frac{{𝒱}(0)}{{ℐ}(0)}=rL\frac{B\cosh (\sqrt{rcs}L)}{\sqrt{rcs}LB\sinh (\sqrt{rcs}L)}$

Angle of sidewall on 1.5 µm trenches - independent on pressure within the given pressure range

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