Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano/Sinan33

The Sinano3.3 recipe

Recipe Sinano3.3

Recipe	Gas	BCl3 5 sccm, HBR 15 sccm
	Pressure	2 mTorr, Strike 3 secs @ 5 mTorr
	Power	900 W CP, 75 W PP
	Temperature	20 degs
	Hardware	100 mm Spacers
	Time	180 secs
Conditions	Run ID	430, 4325 ID
	Conditioning	Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
	Mask	180 nm zep etched down to 64 nm

• The results of the Sinano3.3 recipe
• 
  The 30 nm trenches
• 
  The 60 nm trenches
• 
  The 90 nm trenches
• 
  The 120 nm trenches
• 
  The 150 nm trenches
• File:BCl3 5 sccm, HBr 15 sccm, 2 mTorr, Strike 3 secs @ 5 mTorr, 900 W CP, 75 W PP, 20 degs, 180 secs

Nominal trench line width	'	'	30	60	90	120	150	Average	Std. dev.
Etch rate	nm/min		71	101	114	120	122	105	21
Sidewall angle	degs		82	82	81	82	81	82	1
CD loss	nm/edge		-4	-2	-2	-5	5	-2	4
CD loss foot	nm/edge		-4	7	13	13	25	11	11
Bowing			10	11	10	-2	1	6	6
Bottom curvature			-27	0	-17	-6	-5	-11	11
Zep etch rate								51