Specific Process Knowledge/Thermal Process/A4 Phosphor Pre-dep furnace

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A4 Furnace Phosphor pre-dep

A4 Phosphorus pre-dep furnace: positioned in cleanroom 2

A4 is a furnace to dope Si wafers with Phosphor to make conductive lanes, etch stops etc. The doping source is Phosphoryl chloride (commonly called phosphorus oxychloride) is a colourless liquid with the formula POCl3.

A4 is the lowest furnace tube in the A-stack positioned in cleanroom 2. The A-stack together with furnace C2 are the cleanest of all our furnaces. Please be aware of which substrates are allowed to enter this furnace. Check the cross contamination chart. If you are in doubt, please send a mail to furnace@danchip.dtu.dk.

The user manual(s), quality control procedure(s) and results, user APV(s), technical information and contact information can be found in LabManager:

Phosphor Pre-dep

Process knowledge

Overview of the performance of the Phosphor pre-dep furnace and some process related parameters

Purpose Doping of Phosphor
Performance

Look at Process knowladge

Process parameter range Process Temperature
  • 900-1150 oC
Process pressure
  • 1 atm
Gasses on the system
  • POCL3
Substrates Batch size
  • 1-30 4" wafer (or 2" wafers) per run
Substrate material allowed