At the moment DANCHIP has 3 PECVDs that can deposite silicon oxide with or without dopants of Boron, Phosphorous or Germanium. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and is described under III-V processing. Look at the PECVD page to learn more about the PECVDs at DANCHIP. Allthough PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.
Recipes on PECVD1 for deposition of silicon oxides
Recipes
| Recipe name
|
SiH4 flow [sccm]
|
NO flow [sccm]
|
N2 flow [sccm]
|
B2H6 flow [sccm]
|
PH3 flow [sccm]
|
Pressure [mTorr]
|
Power [W]
|
Description
|
| 1oxide/1ox_std/standard
|
17
|
1600
|
0
|
0
|
0
|
400
|
380LF
|
Process control recipe. Developed for waveguides
|
| 1PBSG
|
17
|
1600
|
0
|
135
|
40
|
500
|
800LF
|
Developed for waveguide top cladding by Haiyan Ou @DTU Photonics
|
| BGE_PBSG
|
17
|
1600
|
0
|
240
|
60
|
500
|
800LF
|
Low stress PBSG
|
Expected results
| Recipe name
|
Deposition rate [µm/min]
|
RI
|
Uniformity [%]
|
Comments
|
| 1oxide/1ox_std/standard
|
~0.193
|
1.46
|
2
|
The latest measured values can be seen in the process control sheet in LabManager
|
| 1PBSG
|
~0.3
|
1.458@633nm
|
|
|
Recipes on PECVD3 for deposition of silicon oxides
Recipes
| Recipe name
|
SiH4 flow [sccm]
|
NO flow [sccm]
|
N2 flow [sccm]
|
B2H6 flow [sccm]
|
PH3 flow [sccm]
|
Pressure [mTorr]
|
Power [W]
|
Description
|
| LFSiO
|
12
|
1420
|
392
|
0
|
0
|
550
|
60
|
Uniform silicon oxide
|
| 1PBSG
|
17
|
1600
|
0
|
135
|
40
|
500
|
800LF
|
BPSG glass for waveguide cladding layer
|
LF=Low Frequency
Expected results
| Recipe name
|
Deposition rate [nm/min]
|
RI
|
Uniformity [%]
|
| LFSiO
|
~81
|
~1.48
|
<1
|
| 1PBSG
|
~228 nm/min
|
.
|
~17%
|
Recipes on PECVD3 for deposition of doped oxide
Recipes
| Recipe name
|
SiH flow [sccm]
|
N flow [sccm]
|
GeH flow [sccm] (scaled by 100)
|
BH flow [sccm]
|
PH flow [sccm]
|
Pressure [mTorr]
|
Power [W]
|
Description
|
| Core-Ge
|
17
|
300
|
300
|
0
|
0
|
400
|
600 LF
|
Process for germanium doped core layer developed by Haiyan Ou from DTU Photonics
|
| Top-BPSG
|
17
|
0
|
0
|
100
|
40
|
500
|
800 LF
|
Process for PBSG top clading layer developed by Haiyan Ou from DTU Photonics
|
Expected results
| Recipe name
|
Deposition rate [nm/min]
|
Refractive index
|
| Core-Ge
|
|
|
| Top-BPSG
|
~248 nm/min
|
~1.458
|
