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Specific Process Knowledge/Lithography/Strip/wetBench06and07

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Revision as of 11:20, 12 January 2026 by Jehem (talk | contribs) (Created page with "=Overview of wet bench 06 and 07= {| class="wikitable" |- ! !! Resist Strip !! Lift-off |- ! scope=row style="text-align: left;" | Process | Wet resist strip || Metal lift-off process |- ! scope=row style="text-align: left;" | Chemical | Remover 1165 (NMP) || Remover 1165 (NMP) |- ! scope=row style="text-align: left;" | Process tempera...")
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Overview of wet bench 06 and 07

Resist Strip Lift-off
Process Wet resist strip Metal lift-off process
Chemical Remover 1165 (NMP) Remover 1165 (NMP)
Process temperature Up to 65°C Up to 65°C
Substrate batch 1-25 wafers 1-25 wafers
Substrate size
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafers
  • 150 mm wafers
Materials allowed
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Silicon oxynitride
 All metals except Type IV (Pb, Te)


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