Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano14

The nano1.4 recipe

Recipe nano1.4

Recipe	Gas	C4F8 75 sccm, SF6 38 sccm
	Pressure	4 mTorr, Strike 3 secs @ 15 mTorr
	Power	800 W CP, 50 W PP
	Temperature	-20 degs
	Hardware	100 mm Spacers
	Time	120 secs
Conditions	Run ID	2000
	Conditioning	Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
	Mask	211 nm zep etched down to 77 nm

• The results of the nano1.4 recipe
• 
  The 30 nm trenches
• 
  The 60 nm trenches
• 
  The 90 nm trenches
• 
  The 120 nm trenches
• 
  The 150 nm trenches
• File:C4F8 75 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 800 W CP, 50 W PP, -20 degs, 120 secs

Nominal trench line width	'	30	60	90	120	150	Average	Std. dev.
Etch rates	nm/min	168	182	185	189	191	183	9
Sidewall angle	degs	91	91	91	91	90	91	0
CD loss	nm/edge	7	-3	-3	-25	-26	-10	15
CD loss foot	nm/edge	12	9	10	-11	1	4	9
Bowing		9	6	4	5	7	6	2
Bottom curvature		-47	-34	-34	-26	-19	-32	10
zep	nm/min						67