Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano11

From LabAdviser

The nano1.1 recipe

Recipe nano1.1
Recipe Gas C4F8 38 sccm, SF6 52 sccm
Pressure 4 mTorr, Strike 3 secs @ 15 mTorr
Power 600 W CP, 50 W PP
Temperature 10 degs
Hardware 100 mm Spacers
Time 120 secs
Conditions Run ID 1815
Conditioning Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
Mask 1dfhj10 nm zep etched down to 6dgh4 nm



Nominal trench line width ' 30 60 90 120 150 Avg Std
ER nm/min 183 218 232 249 256 228 29
SA degs 95 94 94 93 93 94 1
base nm/edge -2 -4 -16 -15 -27 -13 10
foot nm/edge -2 -4 -16 -15 3 -7 9
Bowing 36 40 49 48 40 42 6
Curve -55 -50 -39 -39 -42 -45 7
zep nm/min 172

Comments

The lower coil power run may still be isotropic-looking either because of a lack of deposition in the process, or because the bias increases as the coil power is decreased, hence the wafer would have received a more phyisically-aggressive process. Lower temp, lower coil + lower platen may be worth a look.