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Plasma Asher 1

Plasma asher 1 was decommissioned 2024-12-02.

Information about decommissioned tool can be found here.

Plasma Asher 2

Plasma asher 2 was decommissioned 2024-12-02.

Information about decommissioned tool can be found here.

Plasma Asher 3: Descum

The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager - requires login

Plasma Asher 3 is specifically used for controlled descum process after lithography. Please note that you only can process a single 100 mm wafer, or one small sample, at a time. The plasma asher is equipped with 2 gaslines: oxygen and nitrogen, but all standard processes use only oxygen (as recommended by Diener).

Ashing of AZ MiR701 resist:
You can use two different descum process developments: you can either change power settings or processing chamber pressure.

Testing different power settings:

Recipe settings:

O2 flow: 5 sccm
N2 flow: 0
Pressure: 0.2 mbar
Power: Varied

Experiment parameters:

	FW/REV	C2/C1	Power
recipe 1	50/0	52/31	50%
recipe 2	100/0	53/31	100%
recipe 3	20/0	51/34	20%

Testing different pressure settings:

Recipe settings:

O2 flow: varied
N2 flow: 0
Pressure: varied
Power: V100% (100 W)

Experiment parameters:

	FW/REV	C2/C1	Oxygen	Pressure
recipe 1	100/0	53/31	5	0,2
recipe 2	100/0	37/38	45	0,8

Ashing of AZ5214E resist:

Recipe settings:

O2 flow: varied
N2 flow: 0
Pressure: varied
Power: V100% (100 W)

Experiment parameters:

	FW/REV	C2/C1	Oxygen	Pressure
recipe 1	100/0	53/31	17	0,4
recipe 2	100/0	37/39	45	0,8

Plasma Asher 4

Descum of AZ 5214E on 100 mm wafers. The descum process development was done for a single substrate, as well as 3 substrates (for decreased ashing rate and improved ashing uniformity). The substrates were placed vertically in the glass boat.

For the 3 substrates only the center substrate was used for testing, the front and back wafers were used as dummy wafers. The wafers were placed in consecutive slots - when running multiple wafers in this way, the first and last wafers should always be dummy wafers.

The user manual, risk assessment, and contact information can be found in LabManager - requires login

Typical descum parameters
Tested with 1.5 µm AZ 5214E on 100 mm silicon substrate.

O₂: 100 sccm
N₂: 100 sccm
Pressure (DSC): 1.3 mbar
Power: 200 W
Chamber temperature at start: 30°C
Time (single wafer): 5-10 minutes = 35-72 nm ashed
Time (multiple wafers): 10-15 minutes = 40-80 nm ashed

Test setup	Single substrate	Center of 3 substrates
Test results	Ashing rate: 5.7 ±2.1 nm/min Non-uniformity: 0.6 ±0.4%	Ashing rate: 3.8 ±1.6 nm/min Non-uniformity: 0.4 ±0.2%
Wafers	1	3
Wafer size	100 mm	100 mm
Boat position	Center of chamber	Center of chamber
Test wafer position	Center of boat	Center of boat
Total gas flow rate	200 sccm	200 sccm
Gas mix ratio	50% N₂	50% N₂
Chamber pressure	1.3 mbar	1.3 mbar
Power	200 W	200 W
Test processing time	Tested parameter	Tested parameter
Test average temperature	33°C	33°C

Single wafer ashing rate an uniformity

Ashing amount and rate
Ashing time [min]:	1	2	5	10	15
Ashing amount [nm]:	5.2	6.2	35.1	72.3	87.1
Ashing rate [nm/min]:	5.2	3.1	7.0	7.2	5.8

Ashing non-uniformity
Ashing time [min]:	1	2	5	10	15
Pre-descum film thickness range [nm]:	11	12	10	11	9
Pre-descum non-uniformity [%]:	0.37	0.40	0.33	0.37	0.30
Post-descum film thickness range [nm]:	10	10	12	19	33
Post-descum non-uniformity [%]:	0.33	0.33	0.41	0.66	1.18

Multi wafer ashing rate and uniformity

Ashing amount and rate
Ashing time [min]:	1	2	5	10	15
Ashing amount [nm]:	4.3	6.7	10.1	39.5	78.8
Ashing rate [nm/min]:	4.3	3.4	2.0	4.0	5.3

Ashing non-uniformity
Ashing time [min]:	1	2	5	10	15
Pre-descum film thickness range [nm]:	11	13	11	12	14
Pre-descum non-uniformity [%]:	0.37	0.43	0.37	0.40	0.46
Post-descum film thickness range [nm]:	11	9	10	12	21
Post-descum non-uniformity [%]:	0.37	0.30	0.33	0.41	0.74

Comparison between single substrate processing and multi substrate processing

Processing a single substrate using the standard descum settings will provide users with a relatively controllable and uniform process. Adding dummy substrates in close proximity with the process substrate will reduce the ashing rate and improve the uniformity:

Ashing amount
Ashing rate
Non-uniformity

Plasma Asher 5

Plasma asher 5 is identical to plasma asher 4, see descum processing for plasma asher 4 here.