Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano10

The nano1.0 recipe

Recipe nano1.0

Recipe	Gas	C4F8 38 sccm, HBr 15 sccm
	Pressure	2 mTorr, Strike 3 secs @ 5 mTorr
	Power	900 W CP, 50 W PP
	Temperature	20 degs
	Hardware	100 mm Spacers
	Time	150 secs
Conditions	Run ID	417, 418 and 419
	Conditioning	Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
	Mask	110 nm zep etched down to 64 nm

• The results of the Sinano3.0 recipe
• 
  The 30 nm trenches
• 
  The 60 nm trenches
• 
  The 90 nm trenches
• 
  The 120 nm trenches
• 
  The 150 nm trenches
• File:BCl3 5 sccm, HBr 15 sccm, 2 mTorr, Strike 3 secs @ 5 mTorr, 900 W CP, 50 W PP, 20 degs, 180 secs