Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace

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Aluminium Anneal furnace (C4)

Aluminium Anneal furnace (C4). Positioned in cleanroom B-1. /Photo: DTU Nanolab internal

The Aluminium Anneal or Al-Anneal furnace (C4) is a Tempress horizontal furnace for annealing and oxidation of different samples.

The samples can for instance be silicon and quartz wafers or small samples with aluminium or ALD deposited Al₂O₃ and TiO₂. Other materials might be allowed in the furnace, but this requires a permision from the Thin Film group. Also please check the cross contamination information in LabManager, before you use the furnace.

The furnace is the lowest of the C-stack furnaces positioned in cleanroom B-1. .

The user manual, technical information and contact information can be found in LabManager:

Aluminium Anneal furnace (C4)

Process knowledge

• Annealing: look at the Annealing page

Overview of the performance of the Aluminium Anneal furnace and some process related parameters

Purpose		Annealing in N2 Dry oxidation with O2
Process parameter range	Process Temperature	Normally 350-500 oC for wafers and samples with aluminium Up to 1150 oC for wafers and samples with other materials
	Process pressure	1 atm (no vacuum)
	Gas flows	N2 (nitrogen): 0-10 slm O2 (oxygen): 0-10 slm
Substrates	Batch size	1-30 4" wafers (or 2" wafers) 1 6" wafer (2 6" wafers with less good uniformity) - Requires training Small samples placed on a 6" dummy wafer - Required traning
	Substrate materials allowed	Silicon and quartz samples with SiO2 and Si3N4 Aluminium Al2O3 deposited by ALD Other materials might be allowed in the furnace, but it requires a permission from the Thin Film group wafers with aluminium. Silicon wafers with Al2O3 and TiO2 deposited by ALD Wafers are allowed enter the furnace after aluminium lift-off or after aluminium etch and resist strip in acetone