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Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching
| Parameter
|
Recipe name: SiO2_res_10
|
Recipe name: DOE2/Post_II_21
|
| Coil Power [W]
|
2500
|
3840
|
| Platen Power [W]
|
300
|
300
|
| Platen temperature [oC]
|
20
|
20
|
| H2 flow [sccm]
|
25.6
|
0
|
| He flow [sccm]
|
448.7
|
0
|
| C4F8 flow [sccm]
|
25.6
|
30
|
| Pressure [mTorr]
|
8.8
|
0.9
|
| Typical results
|
SiO2_res_10
|
DOE2/Post_II_21
|
| Average etch of SRN on 6" wafer
|
166 nm/min [+- 17% over a 6" wafer]
|
142 nm/min [+- 9% over a 6" wafer]
|
| Etch rate of Si3N4
|
?
|
?
|
| Etch rate of SiO2
|
250 nm/min [+- 3% over a 6" wafer]
|
306 nm/min [on small piece]
|
| Etch rate in Si
|
?nm/min
|
? nm/min
|
| Etch rate of Mir resist
|
? nm/min
|
? nm/min
|
Etch rate uniformity
- SRN (LPCVD) etch uniformity with recipes optimized for SiO2 etching tested on unpatterned wafers
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