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Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching
| Parameter
|
Recipe name: SiO2_res_10
|
Recipe name: DOE2/Post_II_21
|
| Coil Power [W]
|
2500
|
3840
|
| Platen Power [W]
|
300
|
300
|
| Platen temperature [oC]
|
20
|
20
|
| H2 flow [sccm]
|
25.6
|
0
|
| He flow [sccm]
|
448.7
|
0
|
| C4F8 flow [sccm]
|
25.6
|
30
|
| Pressure [mTorr]
|
8.8
|
0.9
|
| Typical results
|
SiO2_res_10
|
DOE2/Post_II_21
|
| Etch of SRN
|
~43nm/min [measured 39-50 nm/min over a 6" wafer]
|
23-25 nm/min [4" on carrier]]
|
| Etch rate of Si3N4
|
~49 nm/min [4" on carrier]
|
24-26 nm/min [4" on carrier]
|
| Etch rate of SiO2
|
~42nm/min [41-43 nm/min over a 6" wafer]
|
13.7-14.7 nm/min [4" on carrier]
|
| Etch rate in Si
|
ñm/min
|
11-13 nm/min (10% load, 4" wafer on 6" carrier)
|
| Etch rate of Mir resist
|
~nm/min
|
~17 nm/min
|
| Tested etch time without burning the resist
|
3 min (6 min => resist burned)
|
30 min
|
| Profile [o]
|
|
|
Etch rate uniformity
