Specific Process Knowledge/Etch/Aluminum Oxide/Al2O3 Etch with ICP Metal

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Al2O3 etching with the ICP metal

Parameter Recipe name: no name (testing recipe)
Coil Power [W] 1200
Platen Power [W] 200
Platen temperature [oC] 0
BCl3 flow [sccm] 60
Cl2 flow [sccm] 30
Pressure [mTorr] 4


Material to be etched Etch rate using the above parameters
Al2O3
  • ~93nm/min (30s, 1/4 wafer on 6" carrier)
    2017-01-20 bghe@nanolab


Al2O3 etching by sanvis@nanolab

Persentation made by Sanvis @DTU Nanolab

Parameter Nanoscale Al2O3 etch Microscale Al2O3 etch
Coil Power [W] 300 500
Platen Power [W] 15 70
Platen temperature [oC] 0 0
BCl3 flow [sccm] 20 40
Cl2 flow [sccm] 7 15
Pressure [mTorr] 1.2 3.0


Material to be etched Nanoscale Al2O3 etch Microscale Al2O3 etch
Etch rate 6.25 nm/min on 6" wafer, Summer sanvis@nanolab 25 nm/min on small samples on Si carrier, Summer 2022 sanvis@nanolab


Al2O3 etching by bghe@nanolab

Recipes

Al2O3 etch
Parameter Recipe 1:Al2O3 etch platen only
BCl3 (sccm) 15
Ar (sccm) 15
Pressure (mTorr) 5
Coil power (W) 0
Platen power (W) 30
Temperature (oC) 20
Spacers (mm) 100 mm

Results