Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano141

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The nano1.41 recipe

Unless otherwise stated, all content on this page was created by Jonas Michael-Lindhard, DTU Nanolab

Recipe nano1.41
Recipe Gas C4F8 75 sccm, SF6 38 sccm
Pressure 4 mTorr, Strike 3 secs @ 15 mTorr
Power 800 W CP, 75 W PP
Temperature -20 degs
Hardware 100 mm Spacers
Time 120 secs
Conditions Run ID 2001
Conditioning Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
Mask 211 nm zep etched down to 10 nm



Nominal trench line width ' 30 60 90 120 150 Average Std. dev.
Etch rates nm/min 155 161 164 171 179 166 9
Sidewall angle degs 91 90 90 90 90 90 1
CD loss nm/edge -1 -11 -13 -36 -37 -20 16
CD loss foot nm/edge 4 1 0 -22 -10 -5 11
Bowing 5 2 5 4 1 3 2
Bottom curvature -45 -40 -34 -29 -23 -34 9
zep nm/min 101