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Anneal-oxide furnace (C1)

The Anneal-oxide furnace (C1) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers. Both 100 mm and 150 mm wafers can be processed in the furnace.

The Anneal-oxide furnace is the top furnace tube in the C-stack furnaces, which positioned in cleanroom B-1. Most of wafers have to be RCA cleaned, before they enter the furnace. The only exceptions are brand new wafers, wafers from the A-stack furnaces, wafers from the LPCVD furnaces (B- and E-stack furnaces) and wafers from PECVD4. Please check the cross contamination information in LabManager, before you use the furnace.

Oxygen is using as oxidant for dry oxidation, and for wet oxidation wafer vapour generated by a steamer is used as oxidant. The oxidation recipes on the furnace are named e.g. "WET1000" and "DRY1000", where "WET" or "DRY" indicates whether it is a wet or dry oxidation process, and the number indicates the oxidation temperature.

Annealing can be done for silicon wafers with layers of e.g. silicon oxide, silicon nitride, polysilicon or BPSG glass (deposited in PECVD4). The annealing recipes are named e.g. "ANN1000" (for annealing at 1000 ^oC).

The oxidation and annealing temperature can be up to 1100 ^oC.

The user manual, technical information and contact information can be found in LabManager:

Anneal-oxide furnace (C1)

Process knowledge

Wet oxidation. More information can be found here
Dry oxidation. More information can be found on the oxidation page
Annealing. More information can be found on the annealing page

Overview of the performance of Anneal Oxide furnace and some process related parameters

Purpose	Oxidation of 100 mm and 150 mm wafers Annealing of 100 mm and 150 mm wafers	Annealing: Using N₂ Oxidation: Dry oxidation using O₂ Wet oxidation using H₂O vapour generated by a RASIRC steamer
Performance	Film thickness	Dry SiO₂: ~ 0 nm to 300 nm (it takes too long to grow a thicker dry oxide layers) Wet SiO₂: ~ 0 nm to 3 µm (23 hours wet oxidation at 1100 ^oC)
Process parameter range	Process Temperature	800-1100 ^oC
	Process pressure	1 atm (no vacuum)
	Gas flows	N₂: 0-10 slm O₂: 0-10 slm Steamer flow : 0-25 liter/minute
Substrates	Batch size	1-30 100 mm or 150 mm wafers (or 50 mm wafers)
Substrates	Substrate materials allowed	New silicon wafers Silicon wafers with layers of silicon oxide or silicon nitride (RCA cleaned) Wafers from the LPCVD furnaces Wafers from PECVD4