Specific Process Knowledge/Thermal Process/RTP Jipelec 2

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Jipelec - Rapid Thermal Processing

Jipelec RTP: Positioned in cleanroom A-4

Jipelec JetFIRST 200 RTP (Rapid Thermal Processer/Annealer).

The main purpose of the machine is to anneal different samples very rapidly, or the machine can be used for alloying.

The machine consists of a process chamber, in which the annealing is done. Samples are placed on quartz pins, either on a graphite sucseptor or, Si dummy wafer or directly in the chamber in the process chamber.

Samples can be 6", 4" wafers or smaller samples made of different materials. In chamber, ht ehte

The maximum annealing temperature is 1200 C, and the heating is done by infrared lamps. Important: check the temperature limits in the table below.

Annnealings can be done at atmospheric pressure or in vacuum. It is also possible to apply a flow of either nitrogen or argon during the annealing.

In the chamber, sample are placed on quartz pins in the bottom of the chamber. 4" and 6" Si wafers can be placed directly on the quartz pins as show in the next picture, or these can be placed on a graphite susceptor. Smaller wafer and smaller samples can be placed on a Si dummy wafer or a graphite susceptor.

The

The Jipelec is a rapid thermal processing (RTP) oven. It is be used for fast and well-controlled annealing or alloying of samples. It is possible to use either a thermocouple or a pyrometer to control the temperature (of the sample carrier).

The user manual, user APV, technical information and contact information can be found in LabManager:

RTP Jipelec 2

Overview of the performance of the Jipelec RTP and some process related parameters

Purpose		RTP annealing
Process parameter range	Process Temperature	0-1200 oC Time limits at temperatures above 700 oC: 700 °C: 60 minutes 800 °C: 30 minutes 900 °C: 20 minutes 1000 °C: 10 minutes 1100 °C: 5 minutes 1200 °C: 1 minute III-V materials to 450 oC Temperature ramp: Up to 50 oC/min with susceptor Up to 100 oC/min without susceptor
	Process pressure	1 atm Vacuum
	Gases on the system	Process gases: N2 Ar Forming gas (4 % H2/96 % N2) - Not connected yet Purge gas: N2 pro
Substrates	Batch size	200 mm wafers 150 mm wafers 100 mm wafers (always placed on a susceptor or dummy wafer) 50 mm wafers (always placed on a susceptor or dummy wafer) Small samples
	Substrate materials allowed	A carrier is always needed: For III-V materials a carbide carrier is used, and for other samples a silicon carrier wafer with 1 µm oxide is used Silicon Silicon oxide Silicon nitride Fused silica/quartz Polysilicon III-V materials (on graphite carrier, max 450 oC) Some metals - Ask the Thin Film group for permission