Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2

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This system is a research tool and not available to the users

If you want to get access to the tool, then talk to professor Henry Jansen

• Nanoscale silicon etching with SF6 and O2
• Black silicon on Demand

Current setup and rules on Pegasus 2

Click here to access older configurations.

The current configuration is

Currently valid from November 2020 onwards

Item	The currently applied modification	Comments
Available gasses and gas chemistry	Available gasses: SF6: 50 sccm O2: 50 sccm Ar: 283 N2: 500 sccm He: 11 sccm Not available: C4F8 (H2 currently fitted but closed) : 0 sccm CO2: (It is not in the software)	OnlySF6 and O2 are used for Si, PR, and Cr etch. The rest is only make-up
Plasma source heaters	. Plenum Heater Inner Heater Magnetic Confinement Heater Chamber Heater	The temperature on the heaters in the plasma source are set to 20 degrees with a high tolerance. This essentially corresponds to powered off compared to default Pegasus temperatures which are in the 120-140 degrees range.
RF power and pressure settings	All recipes run without coil power, very low platen power and low pressures	None of the recipes use coil power in order to prevent aluminium fluoride formation at the aluminium oxide dome. These particles may drop on the wafer or chuck and cause abnormalitites. Most of the recipes

Access to Pegasus 2 configuration templates

Pegasus 2 configuration table version 1

• Table header: Template:Peg2configheader1

• Table content: Template:Peg2configcontent1