Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-3

Feedback to this page: click here

Pegasus 3 - 150mm silicon etching

The tool is ready for user training.

The Pegasus 3 cassette station (left), operator station (center) and support computer with Picoscope process monitoring.

The user manual(s) is available, technical information and contact information can be found in LabManager:

Equipment info in LabManager

Process information

Standard recipes

• Barc etch

Hardware changes

Compared to a standard SPTS DRIE Pegasus chamber, the Pegasus 3 has had the same modifications as the Pegasus 1 with the exception of the Claritas EPD system. The changes are listed below.

• Change of Pegasus 1 showerhead in 2019

• Addition of Picoscope oscilloscope system for process monitoring on Pegasus 1 in February 2019

Other etch processes

• Continuous nanostructure etches including nano1.42

• Etch processes with DUV masks

• BARC etches

• Isotropic etches

More processes, such as for DUV resist, are currently being developed, but they are not quite 'ready for publication' at LabAdviser so please contact Jonas (mailto:jmli@dtu.dk) for more information.

Advanced Processing - Henri Jansen style

• Etch silicon nanostructures
• Etch high aspect ratio silicon microstructures
• Etch 3 dimensional silicon microstructures
• Etch black silicon
• Using OES to monitor etch process

Wafer bonding

To find information on how to bond wafers or chips to a carrier wafer, click here.

Characterisation of etched trenches

Comparing differences in etched trenches requires a set of common parameters for each trench. Click HERE to find more information about the parameters used on the DRIE-Pegasus process development.

Internal Nanolab Process log for Pegasus 3

Process log at Nanolab [1]