Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si deposition using PECVD
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| Recipe | Dep. rate [nm/min] | RI | Unif. [%] | Stress [MPa] | Comments | SiH4 [sccm] | N2O [sccm] | N2 [sccm] | B2H6 | PH3 | Pressure [mTorr] | Power [W] | Load | Tune | Time [mm:ss] | Tested
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| LF SiO | 75-78 nm/min | 1.480-1.483 | ± 2.1-2.7% | compressive 309 MPa | more results | 12 | 1420 | 392 | 550 mTorr | 60LF" | 1:15/13:00(stress) | February 2017 bghe | ||||
| HF SiO | 63-64 nm/min | 1.476-1.477 | ± 0.3-0.5% | Compressive: 250.5 MPa | 10 | 1420 | 392 | 900 mTorr | 30HF | 2:00/16:00(stress) | February 2017 bghe | |||||
| waveguide | 159.5 nm/min | 1.462 | ± 0.8% | Compressive: 121.9 MPa | 17 | 2000 | 300 mTorr | 700LF | 40:00 | February 2017 bghe | ||||||
| BPSG | 259 nm/min | 1.4593 | ± 1.7% | Compressive: 36.7 MPa | Measured after anneal in Clad1000 | 17 | 1600 | 135 | 40 | 900 mTorr | 800LF | 10:00/56:00(stress) | February 2017 bghe | |||
| BPSG low stress | 302 nm/min | 1.4598 | ± 1.7% | Compressive: 1.4 MPa | Measured after anneal in Clad1000 | 17 | 1600 | 240 | 60 | 500 mTorr | 800LF | 10:00 | February 2017 bghe |