Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si deposition using PECVD

Recipe	Dep. rate [nm/min]	RI	Unif. [%]	Stress [MPa]	Comments	SiH4 [sccm]	N2O [sccm]	N2 [sccm]	B2H6	PH3	Pressure [mTorr]	Power [W]	Load	Tune	Time [mm:ss]	Tested
LF SiO	75-78 nm/min	1.480-1.483	± 2.1-2.7%	compressive 309 MPa	more results	12	1420	392			550 mTorr	60LF"			1:15/13:00(stress)	February 2017 bghe
HF SiO	63-64 nm/min	1.476-1.477	± 0.3-0.5%	Compressive: 250.5 MPa		10	1420	392			900 mTorr	30HF			2:00/16:00(stress)	February 2017 bghe
waveguide	159.5 nm/min	1.462	± 0.8%	Compressive: 121.9 MPa		17	2000				300 mTorr	700LF			40:00	February 2017 bghe
BPSG	259 nm/min	1.4593	± 1.7%	Compressive: 36.7 MPa	Measured after anneal in Clad1000	17	1600		135	40	900 mTorr	800LF			10:00/56:00(stress)	February 2017 bghe
BPSG low stress	302 nm/min	1.4598	± 1.7%	Compressive: 1.4 MPa	Measured after anneal in Clad1000	17	1600		240	60	500 mTorr	800LF			10:00	February 2017 bghe