Specific Process Knowledge/Etch/Wet Polysilicon Etch

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Wet PolySi Etch

The 'Poly Si Etch' bath is placed inside Wet Bench 04 in cleanroom D-3

The wet PolySi Etch is an isotropic silicon etch. This holds for both a poly-silicon thin-film as well as single-crystalline material such as a Si(100) surface. The Poly Si Etch bath is placed inside 'Wet Bench 04: Oxide and Poly etch' cleanroom D-3. For samples that are not allowed in this bath the polysilicon etch solution can also be mixed in a plastic beaker in Fume hood 01 or 02 (Acids/bases).

The PolySi Etch is typically used for opening holes in poly-silicon thin-films, using photoresist as an etch mask or to strip Poly silicon of a wafer. Due to its isotropic nature the under-etching (etch-bias) at least amounts to the thickness of the poly-silicon layer. Another example of usage is etching of "circular-shaped" holes in silicon substrates.

The PolySi Etch is based on the combined oxidation of silicon followed by dissolution of the silicon oxide. The etch solution consists of:

HNO₃ : BHF : H₂O - (20 : 1 : 20)

NB: The life time of the solution is a few days to one week.

The user manual and contact information can be found in LabManager:

Poly Si Etch info page in LabManager

PolySi Etch data

	PolySi Etch @ room temperature
General description	Etch of poly-si/Si(100)
Chemical solution	HNO₃ : BHF : H₂O (20 : 1 : 20)
Process temperature	Room temperature
Possible masking materials	Photoresist(min. 2.2 µm is recommended) LPCVD-oxide (TEOS)
Etch rate	R_Si ~100-200 nm/min (depending on doping level) R_SiO₂ ~6 nm/min R_Si₃N₄ ~0 nm/min Photoresist (2.2 µm) withstand ~20-30 min
Batch size	1-25 wafers at a time
Size of substrate	4-6" wafers