Specific Process Knowledge/Lithography/Development

From LabAdviser

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Developerment Comparison Table

Equipment Developer-1 and 2 Developer: 6inch SU8-Developer Developer: TMAH Manual Developer: TMAH UV-lithography
Purpose

Development of

  • AZ 5214E
  • AZ 4562

Development of

  • AZ 5214E
  • AZ 4562

Development of

  • SU-8

Development of

  • AZ nLOF
  • AZ MiR 701
  • AZ 5214E
  • AZ 4562
  • DUV resists

Development of

  • AZ nLOF
  • AZ MiR 701
  • AZ 5214E
  • AZ 4562
  • DUV resists

Post-exposure baking

Developer

AZ 351B diluted 1:5 in water

(NaOH and sodium borate salt)

AZ 351B diluted 1:5 in water

(NaOH and sodium borate salt)

mr-Dev 600

(PGMEA)

AZ 726 MIF

(2.38% TMAH in water)

AZ 726 MIF

(2.38% TMAH in water)

Method Development

Submersion

Submersion

Submersion

Spray/Puddle

Puddle

Handling

Cassette

Cassette

Single wafer holder

Edge handling chuck or chip "basket"

Vacuum chuck

Process parameters Temperature

22°C

22°C

Room temperature

Room temperature

Room temperature

Agitation

Manual

Circulation and mechanical

Magnetic stirrer

Rotation

Rotation

Rinse

DI water

DI water

IPA

DI water

DI water

Substrates Substrate size
  • 100 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafers
  • Chips (5mm to 2")
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafers
  • 150 mm wafers
Allowed materials

Silicon, glass, and polymer substrates

Film or pattern of all types

Silicon, glass, and polymer substrates

Film or pattern of all types

Silicon and glass substrates

Film or pattern of all but Type IV

Silicon, glass, and polymer substrates

Film or pattern of all types

Silicon and glass substrates

Film or pattern of all but Type IV

Batch

1-8

1-25

1-6

1

1-25


Developer-1 and Developer-2

Developer-1 (right) and Developer-2 (left) are located in C-1

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Developer-1 and Developer-2 are manual developer baths for submersion development of AZ 5214E and AZ 4562 resists in AZ 351B developer. The developer is mixed 1:5 in water by the user prior to development start, and the wafer cassette is agitated manually by the user during development. The development time is controlled manually by the user. After development, the substrates are rinsed with water in the bench.

The user APV, and contact information can be found in LabManager: Developer-1 Developer-2

Process information

Standard development time using vigorous agitation:

AZ 5214E:

  • 1.5µm resist: 60 sec
  • 2.2µm resist: 70 sec
  • 4.2µm resist: 3 min

AZ 4562:

  • 10µm resist: 5 min

Standard development procedure:

  • Before using one of developer baths, please check the "Litho4_Dev-7up-KOH" logbook to find out when they were last used. A fresh bath can be reused without problems.
  • The main rule is a developer made yesterday must be changed.
  • During development, agitate the substrates by moving the carrier up and down.
  • Rinse substrates with water for 4-5 min. after development.
  • Spin-dry substrates or dry with nitrogen gun after rinsing.

Procedure for making a new developer

1. Switch off the heater, and dump the old developer.

2. 800ml "Developer AZ 351B" is mixed with 4000ml water in a special container in the fume hood.

3. Fill the bath with the developer mixture, and heat it to 22°C before use.

Equipment performance and process related parameters

Purpose

Development of

  • AZ 5214E
  • AZ 4562
Developer

AZ 351B diluted 1:5 in water

(NaOH and sodium borate salt)

Method Development

Submersion

Handling

Cassette

Process parameters Temperature

22°C

Agitation

Manual

Rinse

DI water

Substrates Substrate size
  • 100 mm wafers
Allowed materials

Silicon, glass, and polymer substrates

Film or pattern of all types

Batch

1-8


Developer-6inch

The Developer: 6inch bench is located in E-4

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The Developer: 6inch bench is an automated developer bath for submersion development of AZ 5214E and AZ 4562 resists in AZ 351B developer. The developer is mixed 1:5 in water by the equipment prior to development start. The developer is circulated during development, and the wafer cassette may be agitated by a mechanical elevator. The development time is controlled manually by the user. After development, the substrates are rinsed with water in the bench.

The user manual, user APV, and contact information can be found in LabManager

Process information

Standard development time:

AZ 5214E:

  • 1.5µm resist: 60 sec
  • 2.2µm resist: 70 sec
  • 4.2µm resist: 3 min

AZ 4562:

  • 10µm resist: 5 min

Equipment performance and process related parameters

Purpose

Development of

  • AZ 5214E
  • AZ 4562
Developer

AZ 351B diluted 1:5 in water

(NaOH and sodium borate salt)

Method Development

Submersion

Handling

Cassette

Process parameters Temperature

22°C

Agitation

Circulation and mechanical

Rinse

DI water

Substrates Substrate size
  • 100 mm wafers
  • 150 mm wafers
Allowed materials

Silicon, glass, and polymer substrates

Film or pattern of all types

Batch

1-25


SU8-Developer

The SU8-Developer bench is located in C-1

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The SU8-Developer bench is a manually operated chemical bench for submersion development of SU-8 photoresist in PGMEA (supplied in the cleanroom as mr-Dev 600). The development process is in two stages; one bath (FIRST) to dissolve the bulk of the resist, and a second, cleaner bath (FINAL) to finish the development. The development time is controlled manually by the user. After development, the substrates are rinsed with IPA and dried in the bench.

The user manual, user APV, and contact information can be found in LabManager

Process information

Several aspects of the outcome of SU-8 processing are affected by the development process. The lithographic resolution is affected by the time between PEB (post-exposure bake) and development, as the cross-linking process continues in the interface between exposed and unexposed regions even at room temperature. Cracks in the structures is affected by two things; the development time, and how much has previously been developed in the developer bath. Cracking is worse with longer development time, and worst in a new developer bath. The effect of the developer use quickly saturates (5-10 wafers). Finally, the stability of fine structures (high aspect ratio) is affected by the rinse after development, as the lower surface tension of IPA compared to PGMEA reduces pattern collapse during drying.

Development time is strongly dependent on the SU-8 thickness. Here are some suggestions:

  • 2-5µm: 2 min. in FIRST; 2 min. in FINAL
  • 40µm: 5 min. in FIRST; 5 min. in FINAL (however, 3 min. in FIRST and 2 min. in FINAL is sufficient)
  • 180-250µm: 15 min. in FIRST; 15 min. in FINAL

Equipment performance and process related parameters

Purpose

Development of

  • SU-8
Developer

mr-Dev 600

(PGMEA)

Method Development

Submersion

Handling

Single wafer holder

Process parameters Temperature

Room temperature

Agitation

Magnetic stirrer

Rinse

IPA

Substrates Substrate size
  • 100 mm wafers
Allowed materials

Silicon and glass substrates

Film or pattern of all but Type IV

Batch

1-6


Developer: TMAH Manual

Developer: TMAH Manual is located in E-4

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Developer: TMAH Manual is a manually operated, single substrate or chip spray-puddle developer. It uses the TMAH based AZ 726 MIF developer (2.38 % TMAH in water with a small amount of wetting agent). The substrates or chips are loaded manually one by one into the developer. Developer dispense, puddle time, water rinse, and drying is performed automatically by the equipment.

The spray nozzle makes it difficult to build up a perfect puddle on 4" or 6" substrates which affects the effectiveness and uniformity of the development. Pre-wetting during dispense or agitation during development may give better results.

Training video

The user manual, user APV, and contact information can be found in LabManager

Process information

Process recipes

  • DP 2x60s: Double puddle, 2 times 60s. Rinse and dry.
  • MP 4x60s: Multiple puddle, 4 times 60s. Rinse and dry.
  • SP 120s: Single puddle, 120s. Rinse and dry.
  • SP 15s: Single puddle, 15s. Rinse and dry.
  • SP 30s: Single puddle, 30s. Rinse and dry.
  • SP 60s: Single puddle, 60s. Rinse and dry.

Utility recipes

  • UTIL-DR: Dome rinse.
  • UTIL-BE: Bottle empty. Danchip use only.

Equipment performance and process related parameters

Purpose

Development of

  • AZ nLOF
  • AZ MiR 701
  • AZ 5214E
  • AZ 4562
  • DUV resists
Developer

AZ 726 MIF

(2.38% TMAH in water)

Method Development

Spray/Puddle

Handling

Edge handling chuck or chip "basket"

Process parameters Temperature

Room temperature

Agitation

none

Rinse

DI water

Substrates Substrate size
  • Chips (6-60 mm)
  • 100 mm wafers
  • 150 mm wafers
Allowed materials

Silicon, glass, and polymer substrates

Film or pattern of all types

Batch

1


Developer TMAH UV-lithography

Developer: TMAH UV-lithography is located in E-4

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Developer TMAH UV-lithography was released Q4 2014.

Training video

The user manual, user APV, and contact information can be found in LabManager

Process information

Equipment performance and process related parameters

Purpose

Development of

  • AZ nLOF
  • AZ MiR 701
  • AZ 5214E
  • AZ 4562
  • DUV resists
Developer

AZ 726 MIF

(2.38% TMAH in water)

Method Development

Puddle

Handling

Vacuum chuck

Process parameters Temperature

Room temperature

Agitation

Rotation

Rinse

DI water

Substrates Substrate size
  • 100 mm wafers
  • 150 mm wafers
Allowed materials

Silicon and glass substrates

Film or pattern of all except Type IV

Batch

1-25