Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace

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C4 Furnace Aluminium Anneal

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C4 Furnace Aluminium Anneal: positioned in cleanroom 2

C4 Furnace Anneal Oxide is a Tempress horizontal furnace for annealing of silicon wafers.

This furnace is the lowest of the furnace tubes in the furnace C-stack positioned in cleanroom 2. The furnaces are the cleanest process chambers in the cleanroom. In this furnace it is allowed to enter wafers that contains aluminium. Check the cross contamination chart. If you are in doubt, please ask one from the furnace team.

Process knowledge


A rough overview of the performance of Aluminium Anneal furnace and some process related parameters

Purpose Annealing .
Performance Film thickness .
Process parameter range Process Temperature
  • 800-1150 oC
. Process pressure
  • 1 atm
. Gas flows
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Substrates Batch size
  • 1-30 4" wafer (or 2" wafers) per run
. Substrate material allowed
  • Silicon wafers (new from the box or RCA cleaned)
    • with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned)
  • Quartz wafers (RCA cleaned)
  • Wafers with aluminium.
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