Specific Process Knowledge/Thermal Process/C3 Anneal-bond furnace
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Revision as of 16:18, 26 February 2008 by BGE (talk | contribs) (New page: ==C3 Furnace Anneal Bond== thumb|300x300px|C2 Furnace Anneal Bond: positioned in cleanroom 2 C3 Furnace Anneal Bond is a Tempress horizontal furnace for oxidation and ...)
C3 Furnace Anneal Bond
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C2 Furnace Anneal Bond: positioned in cleanroom 2
C3 Furnace Anneal Bond is a Tempress horizontal furnace for oxidation and annealing of silicon wafers.
This furnace is the second furnace tube in the furnace C-stack positioned in cleanroom 2. The furnaces are the cleanest process chambers in the cleanroom. In this furnace it is allowed to enter wafers that comes directly from bonding in EVG NIL (assuming they were very clean when entering EVG NIL). Check the cross contamination chart. If you are in doubt, please ask one from the furnace team.
Process knowledge
Purpose | Oxidation and annealing | Oxidation:
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---|---|---|
Performance | Film thickness |
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Process parameter range | Process Temperature |
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. | Process pressure |
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. | Gas flows |
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Substrates | Batch size |
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. | Substrate material allowed |
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