Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano/Sinano32

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The Sinano3.2 recipe

Recipe Sinano3.2
Recipe Gas BCl3 5 sccm, HBR 15 sccm
Pressure 2 mTorr, Strike 3 secs @ 5 mTorr
Power 900 W CP, 60 W PP
Temperature 20 degs
Hardware 100 mm Spacers
Time 120 secs
Conditions Run ID 426, 428 ID
Conditioning Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
Mask The 180 nm zep resist etched down to 110 nm


Nominal trench line width ' ' 30 60 90 120 150 Average Std. dev.
Etch rate nm/min 67 91 98 100 105 92 15
Sidewall angle degs 82 83 82 82 81 82 1
CD loss nm/edge -14 -14 -18 -15 -15 -15 2
CD loss foot nm/edge -14 -5 -3 3 6 -3 8
Bowing 10 16 17 15 17 15 3
Bottom curvature -41 -11 -6 6 6 -9 19
Zep etch rate 40