Specific Process Knowledge/Lithography/Development
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Developers: Comparison Table
| Equipment | Developer-1 and 2 | Developer: 6inch | SU8-Developer | Developer: TMAH Manual | Developer: TMAH UV-lithography | |
|---|---|---|---|---|---|---|
| Purpose |
Development of
|
Development of
|
Development of
|
Development of
|
Development of
Post-exposure baking | |
| Developer |
AZ 351B diluted 1:5 in water (NaOH and sodium borate salt) |
AZ 351B diluted 1:5 in water (NaOH and sodium borate salt) |
mr-Dev 600 (PGMEA) |
AZ 726 MIF (2.38% TMAH in water) |
AZ 726 MIF (2.38% TMAH in water) | |
| Method | Development |
Submersion |
Submersion |
Submersion |
Spray/Puddle |
Puddle |
| Handling |
Cassette |
Cassette |
Single wafer holder |
Edge handling chuck or chip "basket" |
Vacuum chuck | |
| Process parameters | Temperature |
22°C |
22°C |
Room temperature |
Room temperature |
Room temperature |
| Agitation |
Manual |
Circulation and mechanical |
Magnetic stirrer |
Rotation |
Rotation | |
| Rinse |
DI water |
DI water |
IPA |
DI water |
DI water | |
| Substrates | Substrate size |
|
|
|
|
|
| Allowed materials |
Silicon, glass, and polymer substrates Film or pattern of all types |
Silicon, glass, and polymer substrates Film or pattern of all types |
Silicon and glass substrates Film or pattern of all but Type IV |
Silicon, glass, and polymer substrates Film or pattern of all types |
Silicon and glass substrates Film or pattern of all but Type IV | |
| Batch |
1-8 |
1-25 |
1-6 |
1 |
1-25 | |
Developer-1 and Developer-2
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Developer-1 and Developer-2 are manual developer baths for submersion development of AZ 5214E and AZ 4562 resists in AZ 351B developer. The developer is mixed 1:5 in water by the user prior to development start, and the wafer cassette is agitated manually by the user during development. The development time is controlled manually by the user. After development, the substrates are rinsed with water in the bench.
The user APV, and contact information can be found in LabManager: Developer-1 Developer-2
Process information
Standard development time using vigorous agitation:
AZ 5214E:
- 1.5µm resist: 60 sec
- 2.2µm resist: 70 sec
- 4.2µm resist: 3 min
AZ 4562:
- 10µm resist: 5 min
Standard development procedure:
- Before using one of developer baths, please check the "Litho4_Dev-7up-KOH" logbook to find out when they were last used. A fresh bath can be reused without problems.
- The main rule is a developer made yesterday must be changed.
- During development, agitate the substrates by moving the carrier up and down.
- Rinse substrates with water for 4-5 min. after development.
- Spin-dry substrates or dry with nitrogen gun after rinsing.
Procedure for making a new developer
1. Switch off the heater, and dump the old developer.
2. 800ml "Developer AZ 351B" is mixed with 4000ml water in a special container in the fume hood.
3. Fill the bath with the developer mixture, and heat it to 22°C before use.
| Purpose |
Development of
| |
|---|---|---|
| Developer |
AZ 351B diluted 1:5 in water (NaOH and sodium borate salt) | |
| Method | Development |
Submersion |
| Handling |
Cassette | |
| Process parameters | Temperature |
22°C |
| Agitation |
Manual | |
| Rinse |
DI water | |
| Substrates | Substrate size |
|
| Allowed materials |
Silicon, glass, and polymer substrates Film or pattern of all types | |
| Batch |
1-8 |
Developer-6inch
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The Developer: 6inch bench is an automated developer bath for submersion development of AZ 5214E and AZ 4562 resists in AZ 351B developer. The developer is mixed 1:5 in water by the equipment prior to development start. The developer is circulated during development, and the wafer cassette may be agitated by a mechanical elevator. The development time is controlled manually by the user. After development, the substrates are rinsed with water in the bench.
The user manual, user APV, and contact information can be found in LabManager
Process information
Standard development time:
AZ 5214E:
- 1.5µm resist: 60 sec
- 2.2µm resist: 70 sec
- 4.2µm resist: 3 min
AZ 4562:
- 10µm resist: 5 min
| Purpose |
Development of
| |
|---|---|---|
| Developer |
AZ 351B diluted 1:5 in water (NaOH and sodium borate salt) | |
| Method | Development |
Submersion |
| Handling |
Cassette | |
| Process parameters | Temperature |
22°C |
| Agitation |
Circulation and mechanical | |
| Rinse |
DI water | |
| Substrates | Substrate size |
|
| Allowed materials |
Silicon, glass, and polymer substrates Film or pattern of all types | |
| Batch |
1-25 |
SU8-Developer
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The SU8-Developer bench is a manually operated chemical bench for submersion development of SU-8 photoresist in PGMEA (supplied in the cleanroom as mr-Dev 600). The development process is in two stages; one bath (FIRST) to dissolve the bulk of the resist, and a second, cleaner bath (FINAL) to finish the development. The development time is controlled manually by the user. After development, the substrates are rinsed with IPA and dried in the bench.
The user manual, user APV, and contact information can be found in LabManager
| Purpose |
Development of
| |
|---|---|---|
| Developer |
mr-Dev 600 (PGMEA) | |
| Method | Development |
Submersion |
| Handling |
Single wafer holder | |
| Process parameters | Temperature |
Room temperature |
| Agitation |
Magnetic stirrer | |
| Rinse |
IPA | |
| Substrates | Substrate size |
|
| Allowed materials |
Silicon and glass substrates Film or pattern of all but Type IV | |
| Batch |
1-6 |
Developer: TMAH Manual
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Developer: TMAH Manual is a manually operated, single substrate spray-puddle developer. It uses the TMAH based AZ 726 MIF developer (2.38 % TMAH in water with a small amount of wetting agent). The substrates are loaded manually one by one into the developer. Developer dispense, puddle time, and a rough water rinse is performed automatically by the equipment.
The user manual, user APV, and contact information can be found in LabManager
Process information
Standard process recipes
- nLoF_40x2: double puddle, 40s each. For development of AZ nLOF 2020 resist.
- MiR701 60s: single puddle, 60s. For development of AZ MiR 701 resist.
- DUV 60s: single puddle, 60s. For development of DUV resists.
Utility recipes
- UTIL-DR: Dome rinse.
- UTIL-BE: Bottle empty. Danchip use only.
| Purpose |
Development of
| |
|---|---|---|
| Developer |
AZ 726 MIF (2.38% TMAH in water) | |
| Method |
Spray/Puddle | |
| Process parameters | Temperature |
Room temperature |
| Agitation |
none | |
| Rinse |
DI water | |
| Substrates | Substrate size |
|
| Allowed materials |
Silicon, glass, and polymer substrates Film or pattern of all types | |
| Batch |
1 |
Developer TMAH UV-lithography
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Developer TMAH UV-lithography was released Q4 2014.
The user manual, user APV, and contact information can be found in LabManager
Process information
| Purpose |
Development of
| |
|---|---|---|
| Developer |
AZ 726 MIF (2.38% TMAH in water) | |
| Method |
Puddle | |
| Process parameters | Temperature |
Room temperature |
| Agitation |
Rotation | |
| Rinse |
DI water | |
| Substrates | Substrate size |
|
| Allowed materials |
Silicon and glass substrates Film or pattern of all except Type IV | |
| Batch |
1-25 |