Specific Process Knowledge/Lithography/UVExposure

From LabAdviser

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UV Exposure Comparison Table

Equipment KS Aligner Aligner-6inch III-V Aligner Inclined UV Lamp
Purpose
  • TS and BS Alignment
  • UV exposure
  • TS and BS Alignment
  • UV exposure
  • TS Alignment
  • UV exposure
  • UV exposure
Performance Minimum feature size
  • 1.25µm down to 1.0µm
  • 1.25µm
  • 2µm
Exposure light/filters/spectrum
  • 350W Hg-lamp
  • i-line filter (365nm notch filter), intensity in Constant Intensity mode: 7mW/cm2 @ 365nm
  • 303nm filter optional
  • 350W Hg-lamp
  • SU8 filter (long-pass), intensity in Constant Power mode: 7mW/cm2 @ 365nm
  • i-line filter optional
  • 350W Hg-lamp
  • the entire 350W Hg-lamp spectrum, intensity in Constant Power mode: 5mW/cm2 @ 365nm
  • 1000 W Hg(Xe) lamp
  • near UV (350-450nm), mid UV (260-320nm), and deep UV (220-260nm)
Exposure mode
  • proximity, soft, hard, vacuum contact
  • proximity, soft, hard, vacuum contact
  • proximity, soft, hard, vacuum contact
  • Flood exposure
  • Proximity exposure with home-made chuck and maskholder
Substrates Batch size
  • 1 small sample
  • 1 50 mm wafers
  • 1 100 mm wafers
  • 1 150 mm wafers
  • 1 50 mm wafers
  • 1 100 mm wafers
  • 25 150 mm wafers with automatic handling
  • 1 small samples
  • 1 50 mm wafers
  • 1 100 mm wafers
  • 1 150 mm wafers
  • all sizes up to 8inch
Allowed materials
  • All cleanroom materials
  • Dedicated 2inch chuck for III-V materials
  • All cleanroom materials except III-V materials
  • III-V compounds
  • All cleanroom materials


Mask for UV exposure

When you do UV exposure you need to have a mask. Here you can find information how to design and order your mask.

Tips and tricks for mask designing

Find a guide for L-edit and mask design here:

Unfortunately they are quite old, but may be useful anyway. Note some links/e-mails etc. are not correct anymore

Alignment marks

Following alignment marks are suggested to use on the EVG620 automatic aligner for good pattern recognition. Pleased be adviced that they can be removed in KOH etching.

External links

Alignment marks location

  • KS Aligner MA6
  • Aligner 6inch EVG620

The mask's alignment marks for 4inch process:

BSA must be located between -1,0 and +1,0 mm in vertical location from mask center (y=0-+1mm) and exactly at 45mm in left and right in horizontal location (x=+-45mm).

TSA must be located 35-45 mm in left and right in horizontal location and between -2 and +2 mm in vertical location.

The mask's alignment marks for 6inch process:

Both BSA and TSA must be located between -2,5 and +2,5 mm in vertical location from mask center and 60 mm in left and right in horizontal location.

Please notice that if you plan to use the automatic alignment option the alignment marks must be displaced from y=0 to y=+/- 1,6mm.

How to order a mask

Our standard mask supplier is Delta Mask. The smallest feature size obtainable from Delta Mask is 1.5 µm. If you need structures smaller than this please write it specificly in the e-mail. Be aware that this will increase the price by at least a factor of 3.

Send your *.cif file or *.gds file (for 7" mask or masks with CD under 1.5µm only *.gds should be used) in an e-mail along with a text file describing your specs (example spec file). E-mail address can be found in Danchip_contact_information. Cost according to Danchip price list.

Mask sets made by Danchip

Danchip quality control masks

This section contains a description of some of the quality control designs.

ASE standisation designs: The quality control procedure on the ASE is using the daqmask 2 mask


RIE standisation design: The quality control procedures on RIE2 is using the dASEfeRIE mask

Masks for process development


KS Aligner

The KSaligner MA6 is placed in C-1

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SUSS Mask Aligner MA6 is designed for high resolution photolithography. The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, hard, soft, proximity) are supplied. Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alignment (BSA) with BSA microscope. It is also possible to make IR- light alignment.

The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager.

Process information

The KS Aligner has an i-line notch filter installed. This results in an exposure light peak around 365nm with a FWHM of 7nm. Dependent on the spectral sensitivity of the resist, the optimal dose may be increased compared to broadband exposure on the Aligner-6inch.


Aligner-6inch

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Aligner-6inch EVG620 is placed in E-5

Aligner-6inch, EVG620 aligner, is designed for high resolution photolithography. The machine can be used for 2, 4 and 6 inch substrates. Cassette-to-cassette handling option is available only for 6inch substrates. The automatic pattern recognition software is available for the special alignment marks design recommended of EVGroup. Please contact Danchip staff for further information. Available exposure mode: proximity, soft, hard and vacuum contact. Two alignment options are available: top side alignment (TSA) and back side alignment (BSA). IR-light alignment also an option.

The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager

Process information

The Aligner-6inch has a long pass filter designed for SU-8 exposure installed. The SU-8 filter has no transmission in the 250-330nm range, and close to full transmission in the 400-500nm range. In the 350-370nm range, the transmission is approximately 0.5. This results in a broadband exposure light consisting of the i-line (365nm), the h-line (405nm), and the g-line (435nm) from the Hg spectrum. Dependent on the spectral sensitivity of the resist, the optimal dose may be decreased compared to i-line exposure on the KS-Aligner.


III-V Aligner

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The SÜSS MicroTec MA1006 mask aligner located in the III-V cleanroom is dedicated for processing of III-V compound semiconductors.

Specific use of the mask aligner can be found in the standard resist recipes.

III-V Aligner positioned in A-5

The user manual and contact information can be found in LabManager: Equipment info in LabManager


Equipment performance and process related parameters

Purpose

Alignment and UV exposure

Performance Exposure mode

soft contact, hard contact, proximity, flood exposure

Exposure light/filters

365 nm, 405 nm

Minimum structure size

down to 2µm

Mask size
  • 3x3inch
  • 5x5inch (with adapter)
Alignment modes

Top side only

Substrates Substrate size
  • 50 mm wafers
  • small pieces 1x1cm
Allowed materials

III-V materials

Batch

1


Inclined UV Lamp

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Inclined UV lamp is placed in E-5

The Inclined UV lamp is 1000 W Hg(Xe)lamp source designed for near UV, 350-450nm, mid UV, 260-320nm, and deep UV, 220-260nm exposures of resists and polymers. The exposure source can be also used to make an inclined exposure in air or in the media tank.

The tool was purchased in February 2009 from Newport. The exposure lamp has a official name: Oriel Flood Exposure Source, unit 92540. All other parts of equipment: substrate and mask holder with media tank, exhaust box around the tool, timer controller, were designed and build at DTU Danchip workshop.

The substrate and mask holder with a media tank was designed as part of Master Thesis of DTU Nanotech, Andres Kristensen group. The exhaust box was made as part of safety and the timer controller was build to control exposure time.

The technical specification and the general outline of the equipment can be found in LabManager.

The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager.


Equipment performance and process related parameters

Purpose

UV exposure

Performance Exposure mode
  • Flood exposure
  • Proximity exposure with mask possible for 4inch substrate
Exposure light/filters
  • Near UV(350-450nm)
  • Mid UV (260-320nm)
  • Deep UV(220-260nm)
Minimum structure size
Mask size

5x5inch optinal

Alignment modes

No alignment possible

Substrates Substrate size

Up to 8inch substrates, different shapes

Allowed materials

All cleanroom materials

Batch

1