Specific Process Knowledge/Doping

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Doping your wafer

This page is about doping your wafer or making a thin film layer doped with boron, phosphor or Germane.



Comparison method 1 and method 2 for the process

Phosphor predep Boron predep PECVD doped thin film Doped Poly Si
Generel description Dopants introduced by diffusion from gas-phase (POCL) Dopants introduced by diffusion from solid source wafers Deposition of doped thin film (oxides or nitrides) Dopants introduced by in-situ doping of poly/amorphous Si
Parameter 1
  • A
  • B
  • A
  • B
  • A
  • B
  • A
  • B
Parameter 2
  • A
  • B
  • C
  • A
  • B
  • A
  • B
  • A
  • B
Substrate size
  • # 100 mm wafers
  • # 100 mm wafers
  • # small samples
  • # 50 mm wafers
  • # 100 mm wafers
  • # 100 mm wafers (Boron and Phosphor)
  • # 150 mm wafers (only Boron)
Allowed materials
  • Silicon
  • Poly/amorphous silicon
  • Oxide
  • Nitride
  • Silicon
  • Poly/amorphous silicon
  • Oxide
  • Nitride
  • Silicon
  • Poly/amorphous silicon
  • Oxide
  • Nitride
  • Silicon
  • Poly/amorphous silicon
  • Oxide
  • Nitride



Ion implantation

Ion beam implantation cannot be done at Danchip. IBS offers ion-beam implantation as a service. See more at: http://www.ion-beam-services.com/about_us.htm