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Ething of Aluminium can be done either wet or dry. For wet etching please see below on this page. Dry etching can be done either with the ICP Metal Etch using Chlorine chemistry or with IBE by sputtering with Ar ions.

Wet Aluminium Etch

Wet etching of aluminium is done with two different solutions:

H₂O:H₃PO₄ 1:2 at 50 ^oC
Pre-mixed etch solution: PES 77-19-04 at 20 ^oC

Both solutions are used in the Aluminium etch bath shown to the right. It must be written on which one is in. Solution no. 1 is the most used solution for etching aluminium. Solution no. 2 is primarily for etching aluminium mixed with a small percentage of silicon.

The user manual and contact information can be found in LabManager:

Al-etch info page in LabManager

Comparing the two solutions

	Aluminium Etch 1	Aluminium Etch 2
General description	Etch of pure aluminium	Etch of aluminium + 1.5% Si
Link to KBA	see KBA here	see KBA here
Chemical solution	H₂O:H₃PO₄ 1:2	PES 77-19-04 77 vol% H₃PO₄ 85% 19 vol% CH₃COOH 100% 4 vol% HNO₃ 70%
Process temperature!	50 ^oC	20 ^oC
Possible masking materials!	Photoresist (1.5 µm AZ5214E)	Photoresist (1.5 µm AZ5214E)
Etch rate	~100 nm/min (Pure Al)	~60 nm/min
Batch size!	1-25 wafers at a time	1-25 wafer at a time
Size of substrate	4" wafers	4" wafers
Allowed materials	Aluminium Silicon Silicon Oxide Silicon Nitride Silicon Oxynitride Photoresist E-beam resist	Aluminium Silicon Silicon Oxide Silicon Nitride Silicon Oxynitride Photoresist E-beam resist