Specific Process Knowledge/Thin film deposition/Wordentec

From LabAdviser

Feedback to this page: click here


Wordentec QCL 800

Wordendec: positioned in cleanroom D-2 in the Wordentec room

The Wordentec is a machine for:

  • Deposition of metal through E-beam deposition
  • Deposition of metal through thermal evaporation
  • Deposition of materials through DC sputtering
  • Cleaning of samples before deposition through Argon RF sputter clean

The Wordentec is designed to deposit on 1-6 samples in sequence, samples of a size up to 6" in diameter. Adaptors exist for deposition on 2", 4" and 6" wafers, but deposition is possible on samples of almost any size and shape, as long as they do not exceed the size of a 6" substrate. The Wordentec supports either single sample deposition on each sample or batch deposition on six wafers in sequence. It is possible to freely combine processes from the machines different sources.


The user manual, quality control procedure and results, user APV, technical information and contact information can be found in LabManager:

Wordentec in LabManager

Process information

The metals available for E-beam evaporation and their standard deposition rates are:

Metal Deposition rate [Å/s]
Titanium (Ti) 10
Chromium (Cr) 10
Aluminium (Al) 10
Nickel (Ni) 10
Platinum (Pt) 10
Gold (Au) 10

Thermal evaporation materials

We currently have Aluminium, Silver and Germanium available to deposit through thermal evaporation.

Sputter materials

It is possible to sputter deposit almost any material, provided that it is possible to deposit with DC sputtering. The materials available currently are:


More information about deposition rates and surface roughness can be found by clicking on the different elements.

Equipment performance and and process related parameters Wordentec

Purpose Deposition of metals
  • E-beam evaporation
  • Sputtering
  • Thermal evaporation
Performance Film thickness
  • ~10Å - 1µm*
Deposition rate
  • ~2.5Å/s - 15Å/s
Process parameter range Process Temperature
  • Less than 80 oC
Process pressure
  • ~3x10-7 - 4x10-6 mbar
Substrates Batch size
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
  • Deposition on one side of the substrate
Substrate material allowed
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
Material allowed on the substrate
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals

* For thicknesses above 200 nm permission is required.

Quality control (QC) for Wordentec

Quality control (QC) for Wordentec
QC Recipe: Au Ni
Deposition rate 10 Å/s 10 Å/s
Thickness 1000 Å 1000 Å
Pressure Below 2*10-6 mbar Below 2*10-6 mbar
QC limits Wordentec
Measured average thickness (Å) 900-1100 Å
Lowest accepted deposition rate (Å/s) 6 Å/s

Thicknesses are measured in 5 points with one of the Dektak instruments.

Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Wordentec&oldid=15775"