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Coaters: Comparison Table

Equipment		SSE Spinner	KS Spinner	Spin Track 1 + 2
Purpose		Coating and baking of AZ5214E resist AZ4562 resist E-beam resist	Coating and baking of AZ5214E resist AZ4562 resist SU8 resist	In-line substrate HMDS priming Coating and baking of AZ MiR 701 (29cps) resist AZ nLOF 2020 resist Post-exposure baking at 110°C
Performance	Substrate handling	Cassette-to-cassette Edge handling chuck	Single substrate Non-vacuum chuck for fragile substrates	Cassette-to-cassette
	Permanent media	AZ5214E resist AZ4562 resist Acetone for chuck cleaning Acetone for drip pan	AZ5214E resist PGMEA for edge bead removal Acetone for chuck cleaning	AZ MiR 701 (29cps) resist AZ nLOF 2020 resist PGMEA for backside rinse and edge-bead removal PGMEA for spinner bowl cleaning and vapor tip bath
	Manual dispense option	2 automatic syringes	yes pneumatic dispense for SU8 resist	no
Process parameter range	Spindle speed	100-5000 rpm	100-5000 rpm	10 - 9990 rpm
Process parameter range	Gyrset	optinal	optinal	no
Substrates	Substrate size	50 mm wafers 100 mm wafers 150 mm wafers	100 mm wafer 150 mm wafer	100 mm wafers 150 mm wafers (tool change required)
	Batch size	1-24	1	1-25
	Allowed materials	All cleanroom materials except III-V materials	All cleanroom materials except III-V materials	Silicon Glass

Developer-1 and Developer-2

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Developer-1 and Developer-2

There are 2 developer baths, develop 1 and develop 2, witch are the same.

Here are some main rules for developer baths use:

Before using a one of developer batch's please check the "Lithography logbog1" to find out when they were used last time. The fresh bath can be easily reused.

The main rule is the develop from yesterday must be changed.

Substrates rinses with with water for 4-5 min. after developing.

Substrates can been spin-dried or dried with nitrogen gun after the rinse.

The standard developing time AZ resist:

1.5µm resist is 60 sec
2.2µm resist is 70 sec
4.2µm resist is 3 min
9,5µm resist is 5min.

The procedure for making a fresh developer

1. 800ml "Developer AZ 351" is mixed with 4000ml water in a special container in the fume hood.

2. Fill the bath with a fresh developer and heat it to 22^oC before use.

Overview of develop process

General description	Develop of AZ resist
Chemical solution	NaOH+ H₂O (1:5)
Process temperature	22 ^oC
Batch size	1-8 wafers at a time
Size of substrate	4" wafers Other sizes can be developed using a single wafer holder.

The user APV, and contact information can be found in LabManager: Developer-1 Developer-2

Equipment performance and process related parameters

Purpose		Spin coating and soft baking UV sensative resists Spin coating and soft baking E-beam resists
Resist		AZ5214E AZ4562 E-beam resists
Performance	Coating thickness	AZ5214E 1-4,2 µm AZ4526 6,2-25 µm E-beam resits 0,1-1 µm
Process parameters	Spin speed	100 - 5000 rpm
	Spin acceleration	100 - 10000 rpm/s
	Hotplate temperature	90°C for softbaking of AZ5214E resist 100°C for softbaking of AZ4562 resist 110°C for reverse baking of AZ5214E resits 180°C for softbaking of e-beam resits
Substrates	Substrate size	50 mm wafers 100 mm wafers 150 mm wafers
	Allowed materials	All cleanroom materials except III-V materials
	Batch	1 - 24

Spin Track 1 + 2

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Spin Track 1 + 2 is an SVG 88 series track system from Rite Track. Each track consists of a HMDS priming module, a spin coating module, and a baking module. In fact, the only difference between the two tracks is the resist used in the spin coating module. Spin Track 1 + 2 is capable of handling 150 mm wafers, as well as 100 mm wafers, but is currently set up for 100 mm wafer processing.

The Spin Track 1 + 2 is controlled using the Recipe Manager software via the touchscreen on the arm attached to the lefthand end of the track. Recipes for the individual modules are developed by Danchip and combined into flows. The user selects a flow (specific to track 1 or 2), and the appropriate recipes will be downloaded and executed on the appropriate track. The other track runs an empty process (no wafers needed), and can unfortunately not be used by a second user while the first user is processing.

The user manual, user APV, and contact information can be found in LabManager

Process information

Equipment performance and process related parameters

Spin Track		1	2
Purpose		HMDS priming Spin coating and soft baking Priming, coating, and baking	HMDS priming Spin coating and soft baking Priming, coating, and baking Post-exposure baking
Resist		AZ MiR 701 (29cps) positive tone	AZ nLOF 2020 negative tone
Performance	Coating thickness	1 - 3 µm	1 - 4 µm
Performance	HMDS contact angle	60° - 90°; standard recipe 82° (on SiO2)
Process parameters	Spin speed	10 - 9990 rpm
	Spin acceleration	1000 - 50000 rpm/s
	Hotplate temperature	90°C	110°C
	HMDS priming temperature	50°C
Substrates	Substrate size	100 mm wafers
	Allowed materials	Silicon and glass wafers Film or pattern of all types
	Batch	1 - 25

KS Spinner

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At Danchip we have RC8-THP system which is one of the SUSS MicroTech spinners.

The main purpose of this equipment is experimental spinning the different resist.The spinner has one resist line, AZ5214E, for automatic dispense. All other resist dispenses manually from syringe or disposable pipettes. All SU8 spinning are done on this machine.

The machine can be also used for spinning on the "difficult" surfaces like the substrates with holes, backside structures and unusual shapes.

The user manual, user APV, and contact information can be found in LabManager

Equipment performance and process related parameters

Purpose		Spin coating and soft baking UV sensative resists Spin coating SU8 resists
Resist		AZ5214E permanent line AZ4562 manual dispense SU8 resists manual dispense
Performance	Coating thickness	AZ5214E 1-4,2 µm AZ4526 6,2-10 µm SU8 resits 0,1-100 µm
Process parameters	Spin speed	100 - 5000 rpm
	Spin acceleration	100 - 5000 rpm/s
	Hotplate temperature	changeable temperature from 20° to 200° SU8 must be bake out on SU8 dedicated hotplates
Substrates	Substrate size	50 mm wafers 100 mm wafers 150 mm wafers
	Allowed materials	All cleanroom materials except III-V materials
	Batch	1