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At the moment DANCHIP has 2(3) PECVDs that can deposite silicon oxide with or without dopants of Boron, Phosphorous or Germanium. PECVD1 has been decommissioned and PECVD3 are for silicon based processing allowing wafers with small abount of metal (<5% wafer coverage). PECVD2 is clean wafers both for silicon based materials and for III-V materials. At the moment PECVD2 is described under III-V processing. Look at the PECVD page to learn more about the PECVDs at DANCHIP. All though PECVD2 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.
Recipes on PECVD2 for deposition of silicon oxides
See here
Recipes on PECVD3 for deposition of silicon oxides
| Quality Controle (QC) for PECVD3 - oxide
|
| QC Recipe:
|
QCOXYD
|
| SiH4 flow
|
12 sccm
|
| N2O flow
|
1420 sccm
|
| N2 flow
|
392 sccm
|
| Pressure
|
550 mTorr
|
| RF-power
|
60 W
|
|
| QC limits
|
PECVD3 - OXIDE
|
| Deposition rate
|
66 - 89 nm/min
|
| Non-uniformity
|
<1.9%
|
| Refractive index
|
1.472 - 1.487
|
|
|
Recipes
| Recipe name
|
SiH4 flow [sccm]
|
N2O flow [sccm]
|
N2 flow [sccm]
|
B2H6 flow [sccm]
|
PH3 flow [sccm]
|
Pressure [mTorr]
|
Power [W]
|
Description
|
| LFSiO
|
12
|
1420
|
392
|
0
|
0
|
550
|
60
|
Uniform silicon oxide
|
| 1PBSG
|
17
|
1600
|
0
|
135
|
40
|
500
|
800LF
|
BPSG glass for waveguide cladding layer
|
LF=Low Frequency
Expected results
| Recipe name
|
Deposition rate [nm/min]
|
RI
|
Uniformity [%]
|
| LFSiO
|
~75
|
~1.48
|
<1
|
| 1PBSG
|
~228 nm/min
|
.
|
~17%
|
Recipes on PECVD3 for deposition of doped oxide
Recipes
| Recipe name
|
SiH4 flow [sccm]
|
N2O flow [sccm]
|
N2 flow [sccm]
|
GeH4 flow [sccm] (scaled by 100)
|
B2H6 flow [sccm]
|
PH3 flow [sccm]
|
Pressure [mTorr]
|
Power [W]
|
Description
|
| Core-Ge
|
17
|
1600
|
300
|
300
|
0
|
0
|
400
|
600 LF
|
Process for germanium doped core layer developed by Haiyan Ou from DTU Photonics
Annnealing: Anneal bond furnace, recipe "core1100"
|
| Top-BPSG
|
17
|
1600
|
0
|
0
|
100
|
40
|
500
|
800 LF
|
Process for PBSG top clading layer developed by Haiyan Ou from DTU Photonics
Annnealing/oxidation: Anneal bond furnace, recipe "clad1000"
|
Expected results
| Recipe name
|
Deposition rate [nm/min]
|
Refractive index
|
| Core-Ge
|
~188 nm/min
|
~1.46969
|
| Top-BPSG
|
~248 nm/min
|
~1.458
|
Recipes on PECVD1 for deposition of silicon oxides Expired!
Recipes
| Recipe name
|
SiH4 flow [sccm]
|
N2O flow [sccm]
|
N2 flow [sccm]
|
B2H6 flow [sccm]
|
PH3 flow [sccm]
|
GeH4*100 flow [sccm]
|
Pressure [mTorr]
|
Power [W]
|
Description
|
| 1oxide/1ox_std/standard
|
17
|
1600
|
0
|
0
|
0
|
0
|
400
|
380LF
|
Process control recipe. Developed for waveguides
|
| 1PBSG
|
17
|
1600
|
0
|
135
|
40
|
0
|
500
|
800LF
|
Developed for waveguide top cladding by Haiyan Ou @DTU Photonics'.
|
| BGE_PBSG
|
17
|
1600
|
0
|
240
|
60
|
0
|
500
|
800LF
|
Low stress PBSG
|
| HO_core
|
17
|
1600
|
300
|
0
|
0
|
400
|
400
|
600LF
|
Developed by Haiyan Ou @fotonik@dtu
|
| HO_top
|
17
|
1600
|
0
|
107
|
40
|
0
|
500
|
800LF
|
Developed by Haiyan Ou @fotonik@dtu
|
Expected results
| Recipe name
|
Deposition rate [µm/min]
|
RI
|
Uniformity [%]
|
Comments
|
| 1oxide/1ox_std/standard
|
~0.193
|
1.46
|
2
|
The latest measured values can be seen in the process control sheet in LabManager
|
| 1PBSG
|
~0.3
|
1.458@633nm
|
|
|
