Jump to content

Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher

From LabAdviser

Feedback to this page: click here


THIS PAGE IS UNDER CONSTRUCTION

SiO2 can be etched in the Plasma Asher using CF4

Test work done January 2014 by Lis Nielsen and Berit G. Herstrøm @Danchip


SiO2 can be etched in the Plasma Asher using CF4. This gives an isotropic etch. In test2 the SiO2 layer has been etched through and there is a small over etch in the Silicon subtrate. The masking material is 100nm Al. Uniformity measurements have been done on wafers with no mask.


Plasma Asher parameter settings and results for the tests
  Test1 Test2
O2 flow 0 sccm 0 sccm
N2 flow 0 sccm 0 sccm
CF4 flow 200 sccm 200 sccm
Power 1000 W 1000 W
Process Time 10 min 50 min
Average Etch rate on wafer (5 points measured) 22.6 nm/min 31.8 nm/min
Non-uniformity over the wafer (5 points measured) ±10.8 % ±11.0 %
Non-uniformity plot



  • Images of isotropic SiO2 etch in the Plasma asher: Test 2
  • Profile image - a little rotated
    Profile image - a little rotated
  • Profile image
    Profile image
  • Tilted profile image of lines
    Tilted profile image of lines
  • Tilted profile image of lines
    Tilted profile image of lines
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/Etching_of_Silicon_Oxide/SiO2_etch_using_Plasma_Asher&oldid=12598"