Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher

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SiO2 can be etched in the Plasma Asher using CF4

Test work done January 2014 by Lis Nielsen and Berit G. Herstrøm @Danchip


SiO2 can be etched in the Plasma Asher using CF4. This gives an isotropic etch. The SiO2 layer has been etched through and there is a small over etch in the Silicon subtrate. The masking material is 100nm Al.


Plasma Asher parameter settings and results for the tests
  Test1 Test2
O2 flow 0 sccm 0 sccm
N2 flow 0 sccm 0 sccm
CF4 flow 200 sccm 200 sccm
Power 1000 W 1000 W
Process Time 10 min 50 min
Average Etch rate on wafer (5 points measured) 22.6 nm/min 31.8 nm/min
Non-uniformity over the wafer (5 points measured) ±10.8 % ±11.0 %
Non-uniformity plot



  • Images of isotropic SiO2 etch in the Plasma asher
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