Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher

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SiO2 can be etched in the Plasma Asher using CF4

Test work done January 2014 by Lis Nielsen and Berit G. Herstrøm @Danchip

SiO2 can be etched in the Plasma Asher using CF4. This gives an isotropic etch. The SiO2 layer has been etched through and there is a small over etch in the Silicon subtrate. The masking material is 100nm Al.

Plasma Asher parameter settings for the tests
	Test1	Test2
O2 flow	0 sccm	0 sccm
N2 flow	0 sccm	0 sccm
CF4 flow	200 sccm	200 sccm
Power	1000 W	1000 W
Process Time	10 min	50 min

Etch rate contour plot test1

• Images of isotropic SiO2 etch in the Plasma asher
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