Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher

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SiO2 can be etched in the Plasma Asher using CF4

Test work done January 2014 by Lis Nielsen and Berit G. Herstrøm @Danchip


SiO2 can be etched in the Plasma Asher using CF4. This gives an isotropic etch. The SiO2 layer has been etched through and there is a small over etch in the Silicon subtrate. The masking material is 100nm Al.