Specific Process Knowledge/Characterization/Thickness Measurer

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Thickness measurer

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Thickness meassurer. Positioned in cleanroom 4

The purpose is to measure the thickness of wafers, depths of larger grooves or height of larger mesas.

Doing a KOH etch can it be helpful to insure no over etching by making a thickness measurement doing the etch.

The user manual, technical information and contact information can be found in LabManager:

Thickness measurer

Process knowledge

Quality Control - Recipe Parameters and Limits

Quality Control (QC) for the Thickness measurer
QC Recipe: Wet1050 Dry1050
H2 flow 3 sccm 0 sccm
O2 flow 2 sccm 5 sccm
Temperature 1050 C 1050 C
Oxidation time 30 min 100 min
QC limits Thickness Non-uniformity (both over a single wafer

and over the boat)

Dry1050 110-116 nm 3 %
Wet1050 305-321 nm 5 %


Equipment performance and process related parameters

Purpose

Measurer the thinkness of silicon wafer

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Performance

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Process parameter range

Process Temperature

  • 800-1150 oC
Process pressure
  • 1 atm
Gasses on the system
Substrates Batch size
  • 1-30 100 mm wafers (or 50 mm wafers) per run
Substrate materials allowed
  • Silicon wafers (RCA cleaned) without metal bulk contamination


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This is a micrometer-screw.

The Thickness measurer in Cleanroom 3

It measures with an accurracy within a few µm. The range is from a few µm up to 5mm. Measure the wafer in the box next to the meter. If this is ok, then other wafers can be measured. There is a calibration device by the DEKTAK. It is calibrated at 750µm.