Specific Process Knowledge/Thermal Process/A3 Phosphor Drive-in furnace

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Phosphorus Drive-in furnace (A3)

A3 Phosphor Drive-in furnace. Positioned in cleanroom 2

The Phosphorus Drive-in furnace (A3) is a Tempress horizontal furnace for oxidation of silicon wafers, annealing of the grown oxide and drive-in of phosphorus after a pre-deposition. Phosphorus pre-deposition takes place in the Phosphorus Predep furnace (A4). The Phosphorus Drive-in furnace can also be used for drive-in of phosphorus which has been ion implanted.

The Phosphorus Drive-in furnace is the third furnace tube in the A-stack positioned in cleanroom 2. The furnaces in the A-stack are the cleanest of all furnaces in the cleanroom. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace.

The user manual, quality control instruction and results, technical information and contact information can be found in LabManager:

Phosphorus Drive-in furnace (A3)

Process knowledge

• Phosphorus drive-in: look at the Dope with Phosphorus page
• Oxidation: look at the Oxidation page
• Annealing: look at the Annealing page

Quality Control - Recipe Parameters and Limits

Quality Controle (QC) for the processes "Wet1050" and "Dry1050"

The QC procedure for Phosphorus Furnace A3 The newest QC data for wet and dry oxide QC Recipe: Wet1050 Dry1050 H2 flow 3 sccm 0 sccm O2 flow 2 sccm 5 sccm Temperature 1050 C 1050 C Oxidation time 30 min 100 min QC limits Thickness Non-uniformity (both single wafer and over the boat) Dry1050 110-116 nm 3 % Wet1050 305-321 nm 5 %

Overview of the performance of the phosphorus drive-in furnace and some process related parameters

Purpose	Drive-in of phosphor, oxidation of silicon and annealing of the oxide.	Oxidation: Dry Wet: with torch (H2+O2)
Performance	Film thickness	Dry SiO2: 50 Å to ~2000 Å (takes too long to make it thicker) Wet SiO2: 50 Å to ~3 µm (takes too long to make it thicker)
Process parameter range	Process Temperature	800-1150 oC
	Process pressure	1 atm
	Gasses on the system	O2, N2 and H2
Substrates	Batch size	1-30 4" wafer (or 2" wafers) per run
	Substrate material allowed	Silicon wafers (RCA cleaned) From A4 furnace directly (e.g. incl. Predep HF) In doubt: look at the cross contamination information in LabManager or please send a mail to thinfilm@danchip.dtu.dk.