Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano141

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The nano1.41 recipe

Recipe nano1.41

Recipe	Gas	C4F8 75 sccm, SF6 38 sccm
	Pressure	4 mTorr, Strike 3 secs @ 15 mTorr
	Power	800 W CP, 75 W PP
	Temperature	-20 degs
	Hardware	100 mm Spacers
	Time	120 secs
Conditions	Run ID	2001
	Conditioning	Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
	Mask	211 nm zep etched down to 10 nm

• The results of the nano1.41 recipe
• 
  The 30 nm trenches
• 
  The 60 nm trenches
• 
  The 90 nm trenches
• 
  The 120 nm trenches
• 
  The 150 nm trenches
• File:C4F8 75 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 800 W CP, 75 W PP, -20 degs, 120 secs

Nominal trench line width	'	30	60	90	120	150	Average	Std. dev.
Etch rates	nm/min	155	161	164	171	179	166	9
Sidewall angle	degs	91	90	90	90	90	90	1
CD loss	nm/edge	-1	-11	-13	-36	-37	-20	16
CD loss foot	nm/edge	4	1	0	-22	-10	-5	11
Bowing		5	2	5	4	1	3	2
Bottom curvature		-45	-40	-34	-29	-23	-34	9
zep	nm/min						101