Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano12

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The nano1.2 recipe

Recipe nano1.2
Recipe Gas C4F8 38 sccm, SF6 52 sccm
Pressure 4 mTorr, Strike 3 secs @ 15 mTorr
Power 800 W CP, 50 W PP
Temperature -10 degs
Hardware 100 mm Spacers
Time 120 secs
Conditions Run ID 1817
Conditioning Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
Mask 343 nm zep etched down to 154 nm



Nominal trench line width ' 30 60 90 120 150 Avg Std
Etch rates nm/min 241 285 307 325 335 299 37
Sidewall angle degs 92 92 92 91 91 92 0
CD loss nm/edge -5 -8 -18 -18 -34 -17 11
CD loss foot nm/edge -5 -8 -18 -18 -4 -10 7
Bowing 19 11 11 14 10 13 4
Curvature -48 -46 -43 -40 -40 -44 4
Zep etch rate nm/min 95

Comments

Lower temperature certainly looks like a step in the right direction. Confirms that the process was too etch aggressive previously, hence the isotropic profiles.