Specific Process Knowledge/Thin film deposition

3rd Level - Material/Methode

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Choose material to deposit

Dielectrica

• Silicon Nitride - Silicon nitride and silicon oxynitride
• Silicon Oxide
• Titanium Oxide

Metals/elements

Period/Group	IVB	VB	VIB	VIIIB	IB	IIIA	IVA
3	.	.	.	.	.	13 Al Aluminium	14 Si Silicon
4	22 Ti Titanium	.	24 Cr Chromium	28 Ni Nickel	29 Cu Copper	.	32 Ge Germanium
5	.	.	42 Mo Molybdenum	46 Pd Palladium	47 Ag Silver	.	50 Sn Tin
6	.	73 Ta Tantalum	74 W Tungsten	78 Pt Platinum	79 Au Gold	.	.

Alloys

• TiW alloy (10%/90% by weight)
• NiCr alloy
• AlTi alloy

Polymers

• SU8
• Antistiction coating
• Topas
• PMMA

Choose deposition equipment

• Alcatel - E-beam evaporator and sputter tool
• Lesker - Sputter tool
• PVD co-sputter/evaporation - E-beam evaporator and multiple wafer tool
• Wordentec - E-beam evaporator, sputter and thermal evaporator
• Physimeca - E-beam evaporator (III-V lab)
• IBE/IBSD Ionfab 300 - Sputter deposition of high quality optical layers and milling/etching
• Hummer - Gold sputtering system
• PECVD - Plasma Enhanced Chemical Vapor deposition
• Furnace LPCVD Nitride (4" and 6") - Deposition of silicon nitride
• Furnace LPCVD Polysilicon (4" and 6") - Deposition of polysilicon
• Furnace LPCVD TEOS (4") - Deposition of silicon oxide
• MVD - Molecular Vapor Deposition
• Black Magic PECVD - Black Magic PECVD (Carbon)
• Electroplating-Ni - Electrochemical deposition of nickel

Section under construction

Dielectrica	Semicondutors	Metals	Alloys	Polymers
Silicon Nitride - and oxynitride Silicon Oxide Titanium Oxide	Silicon|	13 Al Aluminium 22 Ti Titanium 24 Cr Chromium 28 Ni Nickel 29 Cu Copper 32 Ge Germanium 42 Mo Molybdenum 46 Pd Palladium 47 Ag Silver 50 Sn Tin 73 Ta Tantalum 74 W Tungsten 78 Pt Platinum 79 Au Gold	TiW alloy (10%/90% by weight) NiCr alloy AlTi alloy	SU8 Antistiction coating Topas PMMA