Specific Process Knowledge/Thermal Process
Choose a process type
- Oxidation - grow a thermal oxide
- Annealing
- Dope with Boron
- Dope with Phosphorus
Choose an equipment to use
- A1 Bor Drive-in furnace - For oxidation and annealing of Si wafers and for drive-in after boron pre-dep
- A2 Bor Pre-dep furnace - For pre-deposition (doping) of boron on Si wafers
- A3 Phosphor Drive-in furnace - For oxidation and annealing of Si wafers and for drive-in after phosphorus pre-dep
- A4 Phosphor Pre-dep furnace - For pre-deposition (doping) of phosphorus on Si wafers
- C1 Furnace Anneal-oxide - For oxidation and annealing of 100 mm and 150 mm wafers
- C2 Gate Oxide furnace - For gate oxide growing on new wafers
- C3 Anneal-bond furnace - For oxidation and annealing of bonded wafers
- C4 Aluminium Anneal furnace - For oxidation and annealing of wafers containing aluminium
- Furnace Noble - For annealing and oxidation of non-clean wafers
- Furnace APOX - For growing of very thick oxide layers
- Jipelec RTP - For rapid thermal annealing of III-V materials and Si based materials
- BCB Curing Oven - For resist curing and metal alloying
- Resist Pyrolysis Furnace - For pyrolysis of different resist layers