Specific Process Knowledge/Thin film deposition/Furnace LPCVD TEOS

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LPCVD (Low Pressure Chemical Vapor Deposition) TEOS

Danchip has one LPCVD TEOS furnace (installed in 1995). The furnace is a Tempress horizontal furnace. The process is a batch process, where TEOS can be deposited on up to 15 wafer at a time.

TEOS is a silicon dioxide based on tetraethoxysilane. The reactive gas is TEOS, and the deposition takes place at a temperature of 725 degrees Celsius. It is possible to anneal the TEOS layer to improve the electrical properties as well as chemical resistance.

The LPCVD TEOS has a excellent step coverage and is very good for trench filling. The film thickness is very uniform over the wafer.

To get information on how to operate the furnace please read the user manual which is uploaded to LabManager.

Process Knowledge

Please take a look at the process side for deposition of TEOS oxide: Deposition of TEOS using LPCVD

Overview of the performance of LPCVD Silicon Nitride and some process related parameters

Purpose	Deposition of TEOS silicon oxide	Deposition of silicon oxide on silicon nitride Deposition of silicon oxide on structured surfaces, eg. to cover holes or sealing small cavities.
Performance	Film thickness\|	Si₃N₄:~50Å - ~3000Å SRN: ~50Å - ~10000Å
	Step coverage	Good
	Film quality	Dense film Few defects
Process parameter range	Process Temperature	800-835 ^oC
	Process pressure	80-230 mTorr
	Gas flows	SiH $_{2}$ Cl $_{2}$ :10-100 sccm NH $_{3}$ :10-75 sccm
Substrates	Batch size	1-25 4" wafer per run Deposition on both sides of the substrate
Substrates	Substrate material allowed	Silicon wafers (new from the box or RCA cleaned) with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) Quartz wafers (RCA cleaned)