Specific Process Knowledge/Thermal Process
Choose a process type
- Oxidation - grow a thermal oxide
- Annealing
- Dope with Boron
- Dope with Phosphorus
Choose an equipment to use
- A1 Furnace Boron drive-in - For oxidation of new wafers and for drive in of Boron pre-dep
- A2 Furnace Boron pre-dep - Dope with Boron: For predeposition of Boron on wafers
- A3 Furnace Phosphorus drive-in - For oxidation of new wafers and for drive in of Phosphorus pre-dep
- A4 Furnace Phosphorus pre-dep - Dope with Phosphorus: For predeposition of Phosphorus on wafers
- C1 Furnace Anneal Oxide - For oxidation and annealing, up to 6" wafer
- C2 Furnace Gate Oxide - For growing of Gate Oxide on new wafers
- C3 Furnace Anneal Bond - For annealing and annealing of bonded wafers
- C4 Furnace Aluminium Anneal - For oxidation and annealing of wafers containing Aluminium
- Furnace Noble - For non-clean annealing
- Furnace APOX - Furnace for growing very thick oxide
- Jipelec RTP - For Rapid Thermal Anneal of III-V materials and Silicon based material